Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization (2007)
Chen, Weimin, McCloskey, Paul, Rohan, James F., Byrne, Patrick, McNally, Patrick J.
The reliability of electroless Ni(P) under-bump metallization (UBM) was evaluated via temperature cycling and solder bump shear strength tests. Commercial diodes and dummy dies fabricated in-house...
Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization (2007)
Chen, Weimin, McCloskey, Paul, Rohan, James F., Byrne, Patrick, McNally, Patrick J.
The reliability of electroless Ni(P) under-bump metallization (UBM) was evaluated via temperature cycling and solder bump shear strength tests. Commercial diodes and dummy dies fabricated in-house...
Natarajan, Gomathi, Rajendra Kumar, R.T., Daniels, Stephen, Cameron, D.C., McNally, Patrick J.
We demonstrate that the chemical composition of the sputtered CuCl thin films could be finely controlled by adjusting the bias to the substrate. The films deposited without any intentional bias were...
Natarajan, Gomathi, Rajendra Kumar, R.T., Daniels, Stephen, Cameron, D.C., McNally, Patrick J.
We demonstrate that the chemical composition of the sputtered CuCl thin films could be finely controlled by adjusting the bias to the substrate. The films deposited without any intentional bias were...
Highly conductive Sb-doped layers in strained Si (2006)
Bennett, N.S., Cowern, N.E.B., Smith, A.J., Gwilliam, R.M., Sealy, B.J., O'Reilly, Lisa, ...
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance...
Highly conductive Sb-doped layers in strained Si (2006)
Bennett, N.S., Cowern, N.E.B., Smith, A.J., Gwilliam, R.M., Sealy, B.J., O'Reilly, Lisa, ...
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance...
Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications (2006)
Natarajan, Gomathi, Daniels, Stephen, Cameron, D.C., O'Reilly, Lisa, Mitra, A., McNally, Patrick J., ...
Copper (I) chloride (CuCl) is a potential candidate for ultraviolet (UV) optoelectronics due to its close lattice match with Si (mismatch less than 0.4%) and a high UV excitonic emission at room...
Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications (2006)
Natarajan, Gomathi, Daniels, Stephen, Cameron, D.C., O'Reilly, Lisa, Mitra, A., McNally, Patrick J., ...
Copper (I) chloride (CuCl) is a potential candidate for ultraviolet (UV) optoelectronics due to its close lattice match with Si (mismatch less than 0.4%) and a high UV excitonic emission at room...
Room-temperature ultraviolet luminescence from ƴ-CuCl grown on near lattice-matched silicon (2005)
O'Reilly, Lisa, Lucas, Francis Olabanji, McNally, Patrick J., Reader, Alec, Natarajan, Gomathi, Daniels, Stephen, ...
We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ƴ-CuCl on Si. This material...
Room-temperature ultraviolet luminescence from ƴ-CuCl grown on near lattice-matched silicon (2005)
O'Reilly, Lisa, Lucas, Francis Olabanji, McNally, Patrick J., Reader, Alec, Natarajan, Gomathi, Daniels, Stephen, ...
We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ƴ-CuCl on Si. This material...
McNally, Patrick J., Kanatharana, Jarujit, Toh, B.H.W., McNeill, D.W., Danilewsky, A.N., Tuomi, T., ...
Mechanical strains and stresses are a major concern in the development of copper-based on-chip metallization. Synchrotron x-ray topography (SXRT), micro-Raman spectroscopy, finite element modeling...
McNally, Patrick J., Kanatharana, Jarujit, Toh, B.H.W., McNeill, D.W., Danilewsky, A.N., Tuomi, T., ...
Mechanical strains and stresses are a major concern in the development of copper-based on-chip metallization. Synchrotron x-ray topography (SXRT), micro-Raman spectroscopy, finite element modeling...
Dilliway, Gabriella D M, Cowern, Nicholas E B, Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J, Bagnall, Darren M
Understanding the process of self-organization of Ge nanostructures on Si with controlled size distribution is a key requirement for their application to devices. In this study, we investigate the...
Dilliway, Gabriella D M, Cowern, Nicholas E B, Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J, Bagnall, Darren M
Understanding the process of self-organization of Ge nanostructures on Si with controlled size distribution is a key requirement for their application to devices. In this study, we investigate the...
Dilliway, Gabriella D M, Cowern, Nicholas E B, Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J, Bagnall, Darren M
Understanding the process of self-organization of Ge nanostructures on Si with controlled size distribution is a key requirement for their application to devices. In this study, we investigate the...
Dilliway, Gabriella D M, Cowern, Nicholas E B, Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J, Bagnall, Darren M
Understanding the process of self-organization of Ge nanostructures on Si with controlled size distribution is a key requirement for their application to devices. In this study, we investigate the...
Dewan, M.N.A., McNally, Patrick J., Herbert, P.A.F.
An analytical solution for the sheath dynamics of an asymmetrically driven capacitively coupled plasma is obtained under the assumptions of time-independent, collisionless ion motion, inertialess...
Dewan, M.N.A., McNally, Patrick J., Herbert, P.A.F.
An analytical solution for the sheath dynamics of an asymmetrically driven capacitively coupled plasma is obtained under the assumptions of time-independent, collisionless ion motion, inertialess...
Islam, M.S., McNally, Patrick J.
GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are...
Islam, M.S., McNally, Patrick J.
GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are...
McNally, Patrick J., Rantamäki, R., Tuomi, T., Danilewsky, A.N., Lowney, Donnacha, Curley, John W., ...
Thermal processing steps used during the production of packaged integrated circuits can lead to severe thermomechanical stresses. In addition, the process of bonding wires to contact pads can also...
McNally, Patrick J., Rantamäki, R., Tuomi, T., Danilewsky, A.N., Lowney, Donnacha, Curley, John W., ...
Thermal processing steps used during the production of packaged integrated circuits can lead to severe thermomechanical stresses. In addition, the process of bonding wires to contact pads can also...
McNally, Patrick J., Dilliway, G., Bonar, J.M., Willoughby, A., Tuomi, T., Rantamäki, R., ...
Synchrotron x-ray topography was used in total reflection topography (TRT) mode to observe strain-induced surface bumps due to the presence of underlying misfit dislocations in strained-layer SiGe on...
McNally, Patrick J., Dilliway, G., Bonar, J.M., Willoughby, A., Tuomi, T., Rantamäki, R., ...
Synchrotron x-ray topography was used in total reflection topography (TRT) mode to observe strain-induced surface bumps due to the presence of underlying misfit dislocations in strained-layer SiGe on...
Rantamäki, R., Tuomi, T., Zytkiewicz, Z.R., Domagala, J., McNally, Patrick J.
Synchrotron x-ray back reflection section topographs of epitaxial lateral overgrown (ELO) GaAs samples grown on (001) GaAs substrates show images of the GaAs layers bent due to the interaction...
Rantamäki, R., Tuomi, T., Zytkiewicz, Z.R., Domagala, J., McNally, Patrick J.
Synchrotron x-ray back reflection section topographs of epitaxial lateral overgrown (ELO) GaAs samples grown on (001) GaAs substrates show images of the GaAs layers bent due to the interaction...
ATTITUDE CONTROL OF UNDERACTUATED MULTIBODY SPACECRAFT Chunlei Rui (1999)
Chunlei Rui, Ilya Kolmanovsky, Patrick J. Mcnally, N. Harris Mcclamroch
. A three dimensional reorientation problem for an underactuated multibody spacecraft is studied. Formulae for approximating the change in orientation of the base body of the spacecraft, induced by...
Ramirez, Jean-Claude, McNally, Patrick J., Cooper, Lisa S., Rosenberg, James J., Freund, L. B.
The results of a combined experimental and analytical investigation of the effects of mechanical stress on DC electrical parameters, particularly threshold voltage, in MESFETs are reported. The...
A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior (1998)
Baric, A., McNally, Patrick J.
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of...
A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior (1998)
Baric, A., McNally, Patrick J.
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of...
M. S. Islam, Patrick J. Mcnally, D. C. Cameron
A novel Pd-based Ohmic contact system is developed for n-GaAs. Metallization samples are annealed at various temperatures and systematically characterized using current-voltage (I-V) measurements,...
McNally, Patrick J., Tuomi, T., Herbert, P.A.F., Baric, A., Äyräs, P., Karilahti, M., ...
Synchrotron X-Ray Topography (SXRT) has been uniquely applied to nondestructively reveal and evaluate the damage throughout the depth of the wafer, caused by the deposition of source/gate/drain...
McNally, Patrick J., Tuomi, T., Herbert, P.A.F., Baric, A., Äyräs, P., Karilahti, M., ...
Synchrotron X-Ray Topography (SXRT) has been uniquely applied to nondestructively reveal and evaluate the damage throughout the depth of the wafer, caused by the deposition of source/gate/drain...
McNally, Patrick J., Herbert, P.A.F., Tuomi, T., Karilahti, M., Higgins, J.A.
A synchrotron x-ray topography analysis of the impact of the distribution of defects/dislocations on the electrical performance of GaAs power varactor diodes was carried out. Diodes fabricated on or...
McNally, Patrick J., Herbert, P.A.F., Tuomi, T., Karilahti, M., Higgins, J.A.
A synchrotron x-ray topography analysis of the impact of the distribution of defects/dislocations on the electrical performance of GaAs power varactor diodes was carried out. Diodes fabricated on or...
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