Dussart, Remi, Thomann, Anne-Lise, Pichon, Laurianne E., Bedra, Larbi, Semmar, Nadjib, Lefaucheux, Philippe, ...
Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those...
Dussart, Remi, Thomann, Anne-Lise, Pichon, Laurianne, Bedra, Larbi, Semmar, Nadjib, Lefaucheux, Philippe, ...
Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those...
Dussart, Remi, Thomann, Anne-Lise, Pichon, Laurianne, Bedra, Larbi, Semmar, Nadjib, Lefaucheux, Philippe, ...
Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those...
Oxidation threshold in silicon etching at cryogenic temperatures (2006)
Tillocher, Thomas, Lefaucheux, Philippe, Mellhaoui, Xavier, Dussart, Remi, Ranson, Pierre, Boufnichel, Mohamed, ...
In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at...
Oxidation threshold in silicon etching at cryogenic temperatures (2006)
Tillocher, Thomas, Lefaucheux, Philippe, Mellhaoui, Xavier, Dussart, Remi, Ranson, Pierre, Boufnichel, Mohamed, ...
In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at...