GaInNAs/GaAs Bragg mirror based structures for novel 1.3µm device applications (2003)
Dawson, M.D., Calvez, S., Pessa, M., Sun, H.D., Hopkins, J.M., Smith, S.A., ...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of...
Valentine, G.J., Sun, H.D., Macaluso, R., Calvez, S., Burns, D., Dawson, M.D., ...
A spin-off from our work on dilute-N GalnNAs VCSELs has been the development of saturable Bragg reflectors (SBR) based on a single 7 nm-thick Ga0.65ln0.35N0.019As0.981 quantum-well grown midway in...
Selective modification of bandgap in GaInNAs/GaAs structures by quantum well intermixing (2003)
Macaluso, R., Sun, H.D., Dawson, M.D., Robert, F., Bryce, A.C., Marsh, J.H., ...
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific...
Quantum well intermixing in 1.3µm GaInNAs/GaAs structures (2003)
Sun, H.D., Macaluso, R., Calvez, S., Dawson, M.D., Robert, F., Bryce, A.C., ...
This paper is about quantum well intermixing in 1.3µm GaInNAs/GaAs structures.