Electrical Conduction in Thin Film Diamond. (9999)
Srikanth, K., Ashok, S., Badzian, A., Badzian, T., Messier, R.
The electrical conduction in thin film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal- diamond-silicon metal-insulator-semiconductor...
Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Modification of Semiconductor Surface Properties with Chemically Bound Molecular Films (2006)
In line with these objectives three parallel and connected thrusts were pursued: (1) investigation of the use of Langmuir-Blodgett (LB) films in MIS Schottky structures to modify the barrier...
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Interface States in Schottky Barrier Diodes. (2002)
Borrego,Jose M., Gutmann,Ronald J., Ashok,S.
Gallium arsenide Schottky barrier junctions have become increasingly important in a wide variety of high performance GaAs microwave devices such as IMPATT diodes, Schottky gate FETs and RF detectors....
Liquid Metal and Hydrogen Embrittlement of Nickel and Iron-Base Amorphous Alloys. (2002)
Ashok,S., Slavin,T., Stoloff,Norman S., Glicksman,M. E.
Tensile and bend properties of nickel and iron-base amorphous alloys have been studied at 200 C in the presence of liquid lithium and in air. Nickel base alloys show severe embrittlement, except for...
Spray Casting of Copper Alloy Composites. (1998)
Ideally suited for the production of composites is the spray casting process. the second phase can be injected during the atomization stage of the process. the process of incorporating the second...