Tunable Kondo effect in a single donor atom (2009)
Lansbergen, G. P., Tettamanzi, G. C., Verduijn, J., Collaert, N., Biesemans, S., Blaauboer, M., ...
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are...
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET (2008)
Lansbergen, G P, Rahman, R, Wellard, C J, Woo, I, Caro, J, Collaert, N, ...
The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic- level functionality, however, requires the ability to control the...
Mitsuhashi, R, Pourtois, G, ...
A significant difference in the magnitude of the threshold voltage (V,) reduction achieved by lanthanum oxide (La2O3) incorporation in ultra-thin dielectrics is observed for TaCx and TaCxNy...
Level Spectrum of Single Gated As Donors (2008)
Lansbergen, G. P., Rahman, R., Caro, J., Collaert, N., Biesemans, S., Klimeck, Gerhard, ...
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction...
Level Spectrum of Single Gated As Donors (2008)
Lansbergen, Gabriel P., Rahman, Rajib, Caro, J., Collaert, N., Biesemans, S., Klimeck, G., ...
We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction...
Veloso, A., Chang, S., Yu, H., Hoffmann, T., Kerner, C., ...
Transport spectroscopy of a single atom in a FinFET (2008)
Lansbergen, G.P., Rahman, R., Caro, J., Biesemans, S., Klimeck, G., Hollenberg, L.C.L., ...
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications (2008)
Menou, N, Wang, XP, Kaczer, B, Polspoel, W, Popovici, M, Opsomer, K, ...
We demonstrate for the first time record low Leakage-EOT (3.5x10(-7) A/cm(2) at 1V, EOT=0.49 nm) MIM capacitors fabricated using a low temperature (250 degrees C) ALD SrTiO3 (STO) deposition process...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Lousberg, Grégory, Yu, HY, Froment, B, Augendre, E, De Keersgieter, A, Lauwers, A, ...
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied...
Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements (2007)
KITTL, JA, PAWLAK, MA, TORREGIANI, C, LAUWERS, A, DEMEURISSE, C, VRANCKEN, C, ...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Yu, HY, Pourtois, G, Anil, KG, Kubicek, S, ...
The impact of TiN film thickness variations on the effective work function (WF) of poly-SiTiN/SiO2 and poly-Si/TiN/HfSiON interfaces has been investigated. The electrical signatures of these gate...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Lousberg, Grégory, Yu, Hong-Yu, Froment, Benoit, Li, M-F, Augendre, E, De Keersgieter, A, ...
Solid-State Device Research Conference, 2006. ESSDERC 2006.
The future of high-K on pure germanium and its importance for GeCMOS (2005)
Delabie, A, Van Elshocht, S, Kubicek, S, Verheyen, P, De Jaeger, B, ...
A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor...
PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application (2005)
Kubicek, S, Rothschild, A, Mitsuhashi, R, Deweerd, W, Veloso, A, ...
HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH3 gas. It is found that HfSiO film stays in an amorphous state after oxidation, while...
45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment (2005)
Yamamoto, K, Hayashi, S, Rothschild, A, Kubicek, S, Veloso, A, ...
Reaction behavior between Ni-FUSI gate and PVD-HfO2 gate dielectrics during FUSI formation was examined. A SiN cap between FUSI and HfO2 was found to increase the yield of the transistors, however,...
Beckx, S, Demand, M, Locorotondo, S, Henson, K, Claes, M, Paraschiv, V, ...
We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium-k and high-k dielectrics have been defined. Source/drain...