Henn, D., Hildebrandt, S., Junge, H., Klumpp, S., Schmeisser, N., ...
wp 1: Analysis and description of the innovation system of the Russian Federation and a programme comparison with the Federal Republic of Germany: Objectives, instruments and structures wp 2:...
Proceedings of the 6th International Conference of Nitride Semiconductors (2006)
Hildebrandt, S., Lymperakis, L., Neugebauer, J., Stutzmann, M.
Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride (1997)
Hildebrandt, S., Uniewski, H., Schreiber, J., Leipner, H.
We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in CdTe originates from the polar Te(g) glide dislocation segments. Crystallographically defined glide...
Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride (1997)
Hildebrandt, S., Uniewski, H., Schreiber, J., Leipner, H.
We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in CdTe originates from the polar Te(g) glide dislocation segments. Crystallographically defined glide...
Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride (1997)
Hildebrandt, S., Uniewski, H., Schreiber, J., Leipner, H.
We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in CdTe originates from the polar Te(g) glide dislocation segments. Crystallographically defined glide...
Hergert, W., Pasemann, L., Hildebrandt, S.
For the calculation of the contrast of a defect in semiconducting material, the defect is regarded as a bounded region where the minority carrier lifetime τ' is lower than that (τ) outside...
QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC (1991)
Schreiber, J., Hildebrandt, S.
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination defect strength of individual dislocations in crystalline semiconductor samples is presented. The...
RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS (1991)
Hildebrandt, S., Schreiber, J., Hergert, W.
The theoretical description used for the analysis of beam-voltage dependent CL and EBIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier...
Hergert, W., Pasemann, L., Hildebrandt, S.
For the calculation of the contrast of a defect in semiconducting material, the defect is regarded as a bounded region where the minority carrier lifetime τ' is lower than that (τ) outside...
QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC (1991)
Schreiber, J., Hildebrandt, S.
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination defect strength of individual dislocations in crystalline semiconductor samples is presented. The...
RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS (1991)
Hildebrandt, S., Schreiber, J., Hergert, W.
The theoretical description used for the analysis of beam-voltage dependent CL and EBIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier...
Hergert, W., Pasemann, L., Hildebrandt, S.
For the calculation of the contrast of a defect in semiconducting material, the defect is regarded as a bounded region where the minority carrier lifetime τ' is lower than that (τ) outside...
QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC (1991)
Schreiber, J., Hildebrandt, S.
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination defect strength of individual dislocations in crystalline semiconductor samples is presented. The...
RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS (1991)
Hildebrandt, S., Schreiber, J., Hergert, W.
The theoretical description used for the analysis of beam-voltage dependent CL and EBIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier...