De Jaeger, J.C., Delage, S. L., Dambrine, G., Di Forte Poisson, M.A, Hoel, V., Lepilliet, S., ...
This study regards the low noise properties of X-bandGaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown onSiC or Si substrates. The HEMTs present very low...
Dambrine, G., Gloria, D., Scheer, P., Raynaud, C., Danneville, F., Lepilliet, S., ...
65nm n-MOSFETs show state-of-the-art cutoff frequency with ft =210 GHz and microwave low noise and high gain properties(NFmin= 0.8dB and Gass=17.3 dB at 12 GHz). As compared with the previous nodes,...
0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate (2001)
Bollaert, S., Wallart, X., Lepilliet, S., Cappy, A., Jalaguier, E., Pocas, S., ...
New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length....
0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate (1998)
Bollaert, S., Cordier, Y., Happy, H., Zaknoune, M., Lepilliet, S., Cappy, A.
We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode...
A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs (1998)
Hoel, V., Bollaert, S., Wallart, X., Grimbert, B., Lepilliet, S., Cappy, A.
A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small...