Chemical interface analysis of as grown HfO2 ultrathin films on SiO2 (2007)
Maunoury, C, Dabertrand, K, Martinez, E, Saadoune, M, Lafond, D, Pierre, F, ...
The quality of the interface between a HfO2 high-k gate dielectric and the Si substrate directly influences its electrical properties. The chemical composition of the interfacial region of HfO2...
Characterization of Crystalline MOCVD SrTiO3 films on SiO2/Si(100) (2005)
Sibai, A., Lhostis, S., Rozier, Y., Salicio, O., Amtablian, S., Dubois, C., ...
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies (2005)
Dubourdieu, C., Roussel, H., Jimenez, C., Audier, M., Senateur, J. P., Lhostis, S., ...
HfO2 and SrTiO3 films were grown on silicon by liq. injection metal org. chem. vapor deposition. The microstructure and structure of the films were characterized by X-ray and electron diffraction,...