G. Rieger, S. Halama, S. Selberherr
This paper presents a tool for initial and intermediate data processing at wafer-state level. Geometric operations and analytical attribute calculations are com-bined with the graphical user...
S. Selberherr, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Readt, ...
A new TCAD system is presented which is capable of performing complex development tasks by means of a powerful interaction language and an efficient database system. The integration of tools is...
Process Flow Representation within the VISTA Framework (2008)
Edited S. Selberherr, E. Strasser September, Ch. Pichler, S. Selberherr
The execution of multi-step simulation sequences involving a number of inde-pendent simulation tools is taken care of by the VISTA simulation flow control module which allows for the definition of a...
F. Fasching, C. Fischer, S. Selberherr, H. Read
The implementation of the Profile Interchange Format (PIF) for Technology CAD (TCAD) purposes is demonstrated. An application program interface for use with process and device simulation tools coded...
A New Analytical Energy Relaxation Time Model for Device Simulation (2007)
Palankovski Gonzalez Kosina, V. Palankovski, B. Gonzalez, H. Kosina, A. Hern, S. Selberherr
We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure...
Predictive simulation of AlGaN/GaN HEMTs (2007)
Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.
For the development of next-generation AlgaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator...
Hydrodynamic modeling of AlGaN/GaN HEMTs (2007)
Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S.
For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach...
Contents 1 Adaptive Energy Integration of Non-Equilibrium Green’s Functions 1 (2007)
O. Baumgartner, W. Gös, A. Nentchev, F. Stimpfl, V. Sverdlov, S. Selberherr
Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., ...
We present the capabilities of our optimization framework in conjunction with typical applications for thermal problems. Our software package supports a wide rage of simulators and optimization...
Heatring - Smart Investigation of Temperature Impact On Integrated Circuit Devices (2006)
Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.
To investigate the electrical on-chip-transistor behavior at different temperatures usually the transistor area on the wafer is heated by external heat sources to operate at a specific temperature....
Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., ...
We present the capabilities of our optimization framework in conjunction with typical applications for thermal problems. Our software package supports a wide rage of simulators and optimization...
Heatring - Smart Investigation of Temperature Impact On Integrated Circuit Devices (2006)
Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.
To investigate the electrical on-chip-transistor behavior at different temperatures usually the transistor area on the wafer is heated by external heat sources to operate at a specific temperature....
Heatring - Smart Investigation of Temperature Impact On Integrated Circuit Devices (2006)
Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.
To investigate the electrical on-chip-transistor behavior at different temperatures usually the transistor area on the wafer is heated by external heat sources to operate at a specific temperature....
Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., ...
We present the capabilities of our optimization framework in conjunction with typical applications for thermal problems. Our software package supports a wide rage of simulators and optimization...
Heatring - Smart Investigation of Temperature Impact On Integrated Circuit Devices (2006)
Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S.
To investigate the electrical on-chip-transistor behavior at different temperatures usually the transistor area on the wafer is heated by external heat sources to operate at a specific temperature....
Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., ...
We present the capabilities of our optimization framework in conjunction with typical applications for thermal problems. Our software package supports a wide rage of simulators and optimization...
Comparison of numerical quantum device models (2004)
Kosina, H., Klimeck, G., Nedjalkov, M., Selberherr, S.
The Wigner equation and non-equilibrium Green's functions are two formalisms widely used in quantum device simulation.
On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices (2004)
We study the calculation of quasi-bound states in nMOS inversion channels and their impact on direct tunneling currents through the dielectric layer. For typical device parameters, the gate leakage...
Semi-classical approximation of electron-phonon scattering beyond Fermi’s Golden Rule ∗ (2004)
C. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr
We derive a quantum mechanical correction to the semiclassical Fermi Golden Rule operator for scattering of electrons in a crystal. This correction takes into account the fact that electron phonon...
A review of modeling issues for RF heterostructure device simulation (2001)
Quay, R., Schultheis, R., Kellner, W., Palankovski, V., Selberherr, S.
We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from...
Optimization of High-Speed SiGe HBTs (2001)
Palankovski, V., Röhrer, G., Wachmann, E., Kraft, J., Löffler, B., Cervenka, J., ...
We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 µm BiC-MOS technology. It involves process calibration, device calibration employing two-dimensional device...
Industrial application of heterostructure device simulation (2001)
Palankovski, V., Quay, R., Selberherr, S.
We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of...
Nonlinear electronic transport and device performance of HEMTs (2001)
Quay, R., Hess, K., Reuter, R., Schlechtweg, M., Grave, T., Palankovski, V., ...
We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the...
M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov
A quantum-kinetic equation accounting for the electron-phonon interaction is solved by a stochastic approach. Analyzed are three analytically equivalent integral formulation of the equation which...
A temperature dependent model for the saturation velocity in semiconductor materials (2000)
Quay, R., Moglestue, C., Palankovski, V., Selberherr, S.
Precise modeling of the saturation velocity is a key element for device simulation, especially for advanced devices such as e.g. High Electron Mobility Transistors (HEMTs) where the saturation...
A global self-heating model for device simulation (2000)
Grasser, T., Palankovski, V., Quay, R., Selberherr, S.
For the design and simulation of state-of-the-art devices self-heating effects must be considered. This is a very difficult task as thermal effects are basically 3D effects and can thus not as easily...
Quay, R., Palankovski, V., Chertouk, M., Leuther, A., Selberherr, S.
Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT...
Simulation of Gallium-Arsenide based high electron mobility transistors (2000)
Quay, R., Massler, H., Kellner, W., Grasser, T., Palankovski, V., Selberherr, S.
We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise...
Industrial application of heterostructure device simulation (2000)
Palankovski, V., Quay, R., Selberherr, S.
We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. Results for Heterostructure Bipolar Transistors...
Analysis of HBT behavior after strong electrothermal stress (2000)
Palankovski, V., Selberherr, S., Quay, R., Schultheis, R.
We present two-dimensional simulations of one-finger power InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) before and after both electrical and thermal stress aging. It Is well known that...
A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation (2000)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times...
III/V device optimization by physics-based S-parameter simulation (2000)
Quay, R., Palankovski, V., Reuter, R., Schlechtweg, M., Kellner, W., Selberherr, S.
A computationally efficient method for three-dimensional simulation of ion implantation (1999)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested in this work. The method is based on a combination of the algorithmic capabilities of...
Thermal simulations of III/V HEMTs (1999)
Quay, R., Reuter, R., Grasser, T., Selberherr, S.
Thermal management is a key problem for semiconductor RF-components due to the reduction of chip and device performance by thermal effects. The simulation of devices at various operating temperatures...
S-parameter simulation of HBTs on Gallium-Arsenide (1999)
Palankovski, V., Quay, R., Selberherr, S., Schultheis, R.
We present two-dimensional simulations of one-finger power Heterojunction Bipolar Transistors (HBTs) on GaAs. Several important physical models are discussed. We demonstrate good agreement of...
K. Dragosits, T. Grasser, R. Strasser, S. Selberherr
1 Parallel and Distributed Simulation 1 1.1 Parallel Computation..................................... 1 1.1.1 Bottom-Level Strategy................................ 1
Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation (1999)
We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions....
Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis (1999)
Simulation of ferroelectric hysteresis allows the analysis of nonvolatile memory cells which are based on ferroelectric materials. We give an overview of our algorithm for the calculation of effects...
An Asymptotic Anslysis of Single-Junction Semiconductor Devices. (1998)
Markovich,Peter A., Ringhofer,C. A., Langer,E., Selberherr,S.
In this paper we present an analysis of the fundamental one-dimensional semiconductor equations describing potential, carrier, and current density distributions in single-junction semiconductor...
This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose the basic mathematical results on the corresponding...
Monte-Carlo simulation of silicon amorphization during ion implantation (1998)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Monte-Carlo simulation of silicon amorphization during ion implantation (1997)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, ...
this paper was partially supported by the Special Research Program SFB F011 "AURORA" of the Austrian Research Fund. Contents 1 Lithography Simulation in VISTA 1
Trajectory split method for Monte-Carlo simulation of ion implantation (1995)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Analytical model for phosphorus large angle tilted implantation (1995)
Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S.
3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE (1988)
This paper presents 3D effects of MOSFET's due to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimensional simulation program....
ON-RESISTANCE IN THE ALDMOST (1988)
Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the...
Implementation of models for stress-reduced oxidation into 2-D simulator (1988)
Seidl, A., Huber, V., Rudan, M., Selberherr, S., Stippel, H., Strasser, E., ...
Numerical models for local oxidation are usually based on an extension of the Deal-Grove model to two dimensions. However, for technological application a model for stress-reduced oxidation (SRO) is...
3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE (1988)
This paper presents 3D effects of MOSFET's due to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimensional simulation program....
ON-RESISTANCE IN THE ALDMOST (1988)
Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the...
3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE (1988)
This paper presents 3D effects of MOSFET's due to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimensional simulation program....
ON-RESISTANCE IN THE ALDMOST (1988)
Nanz, G., Dickinger, P., Kausel, W., Selberherr, S.
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the...