Free Volumes in Polystyrene Probed by Positron Annihilation (1995)
Uedono, A., Kawano, T., Wei, L., Tanigawa, S., Ban, M., Kyoto, M.
Polystyrene specimens with different molecular weights were characterized by the positron annihilation technique. Lifetime spectra of positrons were measured in the temperature range between room...
Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Wada, K., Nakanishi, H.
Plasma-induced defects in n-type GaAs were studied by a monoenergetic positron beam. The depth distribution of point-defects was obtained from measurements of Doppler broadening profiles of the...
Positron Studies of Oxide-Semiconductor Structures (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Suzuki, R., Ohgaki, H., ...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and...
Free Volumes in Polystyrene Probed by Positron Annihilation (1995)
Uedono, A., Kawano, T., Wei, L., Tanigawa, S., Ban, M., Kyoto, M.
Polystyrene specimens with different molecular weights were characterized by the positron annihilation technique. Lifetime spectra of positrons were measured in the temperature range between room...
Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Wada, K., Nakanishi, H.
Plasma-induced defects in n-type GaAs were studied by a monoenergetic positron beam. The depth distribution of point-defects was obtained from measurements of Doppler broadening profiles of the...
Positron Studies of Oxide-Semiconductor Structures (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Suzuki, R., Ohgaki, H., ...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and...
Free Volumes in Polystyrene Probed by Positron Annihilation (1995)
Uedono, A., Kawano, T., Wei, L., Tanigawa, S., Ban, M., Kyoto, M.
Polystyrene specimens with different molecular weights were characterized by the positron annihilation technique. Lifetime spectra of positrons were measured in the temperature range between room...
Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Wada, K., Nakanishi, H.
Plasma-induced defects in n-type GaAs were studied by a monoenergetic positron beam. The depth distribution of point-defects was obtained from measurements of Doppler broadening profiles of the...
Positron Studies of Oxide-Semiconductor Structures (1995)
Uedono, A., Wei, L., Kawano, T., Tanigawa, S., Suzuki, R., Ohgaki, H., ...
The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and...
Uedono, A., Suzuki, R., Tanigawa, S.
The age-momentum correlation measurements were applied to the study of annihilation characteristics of positrons and positronium (Ps) in benzene, carbontetrachloride and those mixtures. The observed...
Characterization of SiO2 films grown on Si substrates by monoenergetic positron beams (1993)
Uedono, A., Wei, L., Tanigawa, S., Suzuki, R., Ohgaki, H., Mikado, T.
Variable-energy positron beams were utilized to characterize SiO2 films grown on Si substrates. For a SiO2 film grown by wet oxidation, a high formation probability of positronium (Ps) was found by...
Defects in vitreous SiO2 probed by positron annihilation (1993)
Uedono, A., Wei, L., Li, X., Tanigawa, S.
Annihilation characteristics of positrons in a single quartz crystal and vitreous silica glasses (v-SiO2) were studied by measurements of two-dimensional angular correlation of positron annihilation...
Uedono, A., Suzuki, R., Tanigawa, S.
The age-momentum correlation measurements were applied to the study of annihilation characteristics of positrons and positronium (Ps) in benzene, carbontetrachloride and those mixtures. The observed...
Characterization of SiO2 films grown on Si substrates by monoenergetic positron beams (1993)
Uedono, A., Wei, L., Tanigawa, S., Suzuki, R., Ohgaki, H., Mikado, T.
Variable-energy positron beams were utilized to characterize SiO2 films grown on Si substrates. For a SiO2 film grown by wet oxidation, a high formation probability of positronium (Ps) was found by...
Defects in vitreous SiO2 probed by positron annihilation (1993)
Uedono, A., Wei, L., Li, X., Tanigawa, S.
Annihilation characteristics of positrons in a single quartz crystal and vitreous silica glasses (v-SiO2) were studied by measurements of two-dimensional angular correlation of positron annihilation...
Uedono, A., Suzuki, R., Tanigawa, S.
The age-momentum correlation measurements were applied to the study of annihilation characteristics of positrons and positronium (Ps) in benzene, carbontetrachloride and those mixtures. The observed...
Characterization of SiO2 films grown on Si substrates by monoenergetic positron beams (1993)
Uedono, A., Wei, L., Tanigawa, S., Suzuki, R., Ohgaki, H., Mikado, T.
Variable-energy positron beams were utilized to characterize SiO2 films grown on Si substrates. For a SiO2 film grown by wet oxidation, a high formation probability of positronium (Ps) was found by...
Defects in vitreous SiO2 probed by positron annihilation (1993)
Uedono, A., Wei, L., Li, X., Tanigawa, S.
Annihilation characteristics of positrons in a single quartz crystal and vitreous silica glasses (v-SiO2) were studied by measurements of two-dimensional angular correlation of positron annihilation...
DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE (1988)
Lee, J.-L., Shim, K.-H., Tanigawa, S., Uedono, A., Kim, J., Park, H., ...
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped CaAs and p-type Si. In B+ and As+- implanted Si...
DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE (1988)
Lee, J.-L., Shim, K.-H., Tanigawa, S., Uedono, A., Kim, J., Park, H., ...
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped CaAs and p-type Si. In B+ and As+- implanted Si...
DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE (1988)
Lee, J.-L., Shim, K.-H., Tanigawa, S., Uedono, A., Kim, J., Park, H., ...
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped CaAs and p-type Si. In B+ and As+- implanted Si...
HIGH TEMPERATURE SEQUENCE IMAGES OF FIELD ION MICROSCOPY (1987)
Doyama, M., Ishimoto, K., Nishida, T., Obara, M., Suzuki, Y., Tanigawa, S.
Atomistic sequence images of high temperature field ion microscopy are presented for copper and aluminum specimens. A possible mechanism is proposed. The images are formed by the specimen self atoms....
HIGH TEMPERATURE SEQUENCE IMAGES OF FIELD ION MICROSCOPY (1987)
Doyama, M., Ishimoto, K., Nishida, T., Obara, M., Suzuki, Y., Tanigawa, S.
Atomistic sequence images of high temperature field ion microscopy are presented for copper and aluminum specimens. A possible mechanism is proposed. The images are formed by the specimen self atoms....
HIGH TEMPERATURE SEQUENCE IMAGES OF FIELD ION MICROSCOPY (1987)
Doyama, M., Ishimoto, K., Nishida, T., Obara, M., Suzuki, Y., Tanigawa, S.
Atomistic sequence images of high temperature field ion microscopy are presented for copper and aluminum specimens. A possible mechanism is proposed. The images are formed by the specimen self atoms....