Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Abstract Thinned Charge Coupled Devices with Flat Focal Planes for UV Imaging (2007)
Todd J. Jones, Peter W. Deelman, S. Tom Elliott, P. J. Grunthaner, Rick Wilson, Shouleh Nikzad
A versatile post-fabrication process to produce thinned, flat, back-illuminated
Delta-doped high purity silicon UV-NIR CCDs with high QE and low dark current (2007)
Hoenk, Michael, Blacksberg, Jordana, Nikzad, Shouleh, Elliott, S. Tom, Holland, Steve, Bebek, Chris
NASA/JPL
Delta doping high purity CCDs and CMOS for LSST (2006)
Blacksberg, Jordana, Nikzad, Shouleh, Hoenk, Michael, Elliott, S. Tom, Bebek, Chris, Holland, Steve, ...
NASA/JPL
Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...
Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices (1998)
Nikzad, Shouleh, Yu, Qiuming, Smith, Aimée L., Jones, Todd J., Tombrello, T. A., Elliott, S. Tom
We report the use of delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50–1500 eV energy range. We show that modification of the CCD back surface by molecular beam...