S. Tsoi

Publication List Details

Period

2003 - 2007

Number

19

Co-Authors

Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO (2007)

Alawadhi, H., Tsoi, S., Lu, X., Ramdas, A. K., Grimsditch, M., Cardona, M., ...

The temperature dependence of the A, B, and C excitons of ZnO, observed in modulated reflectivity spectra of (ZnO)-Zn-68-O-18 and (ZnO)-Zn-nat-O-nat in the range 10-400 K, reveal the superposition of...

Raman electron paramagnetic resonance in Zn1-xCrxTe and Cd1-xCrxTe (2007)

Lu, X., Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H.

Raman electron paramagnetic resonance (Raman-EPR) of the transitions due to the spin flip of the 3d electrons of Cr+ in Zn1-xCrxTe and Cd1-xCrxTe is observed at h omega(PM)=g(Cr+)mu B-B with...

Fe vibrational Spectroscopy of myoglobin and cytochrome f (2006)

Adams, K. L., Tsoi, S., Yan, J. S., Durbin, S. M., Ramdas, A. K., Cramer, W. A., ...

The Fe vibrational density of states (VDOS) has been determined for the heme proteins deoxymyoglobin, metmyoglobin, and cytochrome f in the oxidized and reduced states, using nuclear resonance...

Fe vibrational Spectroscopy of myoglobin and cytochrome f (2006)

Adams, K. L., Tsoi, S., Yan, J. S., Durbin, S. M., Ramdas, A. K., Cramer, W. A., ...

The Fe vibrational density of states (VDOS) has been determined for the heme proteins deoxymyoglobin, metmyoglobin, and cytochrome f in the oxidized and reduced states, using nuclear resonance...

Isotopic-mass dependence of the A, B, and C excitonic band gaps in ZnO at low temperatures (2006)

Tsoi, S., Lu, X., Ramdas, A. K., Alawadhi, H., Grimsditch, M., Cardona, M., ...

Low temperature wavelength-modulated reflectivity measurements of isotopically engineered ZnO samples have yielded the dependence of their A, B, and C excitonic band gaps on the isotopic masses of Zn...

Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy (2006)

Capano, M. A., Kim, B. C., Smith, A. R., Kvam, E. P., Tsoi, S., Ramdas, A. K.

Cubic (3C) silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition, characterized using transmission electron microscopy (TEM), high-resolution x-ray diffraction (HRXRD),...

Isotopic-mass dependence of the A, B, and C excitonic band gaps in ZnO at low temperatures (2006)

Tsoi, S., Lu, X., Ramdas, A. K., Alawadhi, H., Grimsditch, M., Cardona, M., ...

Low temperature wavelength-modulated reflectivity measurements of isotopically engineered ZnO samples have yielded the dependence of their A, B, and C excitonic band gaps on the isotopic masses of Zn...

Resonant electronic raman scattering in a Van Vleck II-VI diluted magnetic semiconductor: Cd1-xFexTe (2005)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

The Van Vleck paramagnetism of Cd1-xFexTe, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of Fe2+, on the one hand, and the spin-flip Raman...

Isotopic dependence of the E-0 ' and E-1 direct gaps in the electronic band structure of Si (2005)

Tsoi, S., Rodriguez, S., Ramdas, A. K., Ager, J. W., Riemann, H., Haller, E. E.

The E-0(') direct transition of Si between its valence band maximum (Gamma(8)(+)) and conduction band minimum (Gamma(6)(-)) and the E-1 direct transition along < 111 > are studied in...

Electronic band gaps of semiconductors as influenced by their isotopic composition (2005)

Ramdas, A. K., Rodriguez, S., Tsoi, S., Haller, E. E.

The present paper focuses on the renormalization effects of the band gaps in the electronic band structure of the elemental semiconductors traced to zero-point vibrations. Electron-phonon interaction...

Structure and energy gap of Cd1-xCaxTe and Cd1-yCaySe as a function of Ca2+ incorporation (2005)

Miotkowski, I., Alawadhi, H., Seong, M. J., Tsoi, S., Ramdas, A. K., Miotkowska, S.

Single crystals of Cd1-xCaxTe and Cd1-yCaySe ternaries, grown by the Bridgman technique and characterized by microprobe and x-ray techniques, showed the upper limit of x and y to be 0.05. The...

Structure and energy gap of Cd1-xCaxTe and Cd1-yCaySe as a function of Ca2+ incorporation (2005)

Miotkowski, I., Alawadhi, H., Seong, M. J., Tsoi, S., Ramdas, A. K., Miotkowska, S.

Single crystals of Cd1-xCaxTe and Cd1-yCaySe ternaries, grown by the Bridgman technique and characterized by microprobe and x-ray techniques, showed the upper limit of x and y to be 0.05. The...

Electronic band gaps of semiconductors as influenced by their isotopic composition (2005)

Ramdas, A. K., Rodriguez, S., Tsoi, S., Haller, E. E.

The present paper focuses on the renormalization effects of the band gaps in the electronic band structure of the elemental semiconductors traced to zero-point vibrations. Electron-phonon interaction...

Resonant electronic raman scattering in a Van Vleck II-VI diluted magnetic semiconductor: Cd1-xFexTe (2005)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

The Van Vleck paramagnetism of Cd1-xFexTe, a diluted magnetic semiconductor, is explored with electronic Raman spectroscopy of an internal transition of Fe2+, on the one hand, and the spin-flip Raman...

Isotopic dependence of the E-0 ' and E-1 direct gaps in the electronic band structure of Si (2005)

Tsoi, S., Rodriguez, S., Ramdas, A. K., Ager, J. W., Riemann, H., Haller, E. E.

The E-0(') direct transition of Si between its valence band maximum (Gamma(8)(+)) and conduction band minimum (Gamma(6)(-)) and the E-1 direct transition along < 111 > are studied in...

Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon (2004)

Tsoi, S., Alawadhi, H., Lu, X., Ager, J. W., Liao, C. Y., Riemann, H., ...

Photoluminescence and wavelength-modulated transmission spectra displaying phonon-assisted indirect excitonic transitions in isotopically enriched Si-28, Si-29, Si-30, as well as in natural Si, have...

Resonant electron spin-flip Raman scattering in CdTe and the diluted magnetic semiconductor Cd1-xVxTe (2004)

Tsoi, S., Miotkowski, I., Rodriguez, S., Ramdas, A. K., Alawadhi, H., Pekarek, T. M.

Resonant enhancement enables the discovery and delineation of spin-flip Raman scattering (SFRS) from free or donor-bound electrons in diluted magnetic semiconductors containing 3d transition-metal...

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition (2003)

Venugopal, R., Wan, J., Melloch, M., Kim, G., Zhank, G., Tsoi, S., ...

A comparison of gallium-nitride (GaN) films grown on large-area Si(111) using a single aluminum-nitride (AlN) buffer, an AlN/graded-AlxGa1-xN buffer, and the introduction of additional...