Tsukimoto, S., Onishi, T., Ito, K., Konno, M., Yaguchi, T., Kamino, T., ...
Role of interface layers and localized states in TiAl-based ohmic contacts to p-type 4H-SiC (2007)
Gao, M., Tsukimoto, S., Goss, S. H., Tumakha, S. P., Onishi, T., Murakami, M., ...
Epitaxial growth of GaN layers on metallic TiN buffer layers (2006)
Uchida, Y, Ito, K, Tsukimoto, S, Ikemoto, Y, Hirata, K, Shibata, N, ...
The effect of target purities on grain growth in sputtered copper thin films (2005)
Moriyama, M, Morita, T, Tsukimoto, S, Shimada, M, Murakami, M
Growth of GaN on nitriding TiN buffer layers (2005)
Watanabe, T, Ito, K, Tsukimoto, S, Ushida, Y, Moriyama, M, Shibata, N, ...
The effect of strain distribution on abnormal grain growth in Cu thin films (2004)
Moriyama, M, Matsunaga, K, Morita, T, Tsukimoto, S, Murakami, M
Advances in EELS spectroscopy by using new detector and new specimen preparation technologies (2003)
Scheu,C., Gao,M., Van Benthem,K., Tsukimoto,S., Schmidt,S., Sigle,W., ...
Advances in EELS spectroscopy by using new detector and new specimen preparation technologies (2003)
Scheu, C., Gao, M., Van Benthem, K., Tsukimoto, S., Schmidt, S., Sigle, W., ...
Arai, S., Tsukimoto, S., Miyai, H., Saka, H.
A solid-liquid interface in the Al-Si system has been observed at near-atomic resolution by in-situ heating experiments inside transmission electron microscopes. The solid Si/alloy liquid of Al(-Si)...