Saeed Mohammadi

Publication List Details

Period

2000 - 2008

Number

10

Co-Authors

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis (2008)

Kim, S, Xuan, Y, Ye, P. D., Mohammadi, Saeed, Lee, S W

Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on...

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes (2008)

Kim, Sunkook, Ju, Sanghyun, Back, J H, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...

The development of mechanically flexible and/or optically transparent electronics could enable next-generation electronics technologies, which would be easy-to-read, light-weight, unbreakable,...

1/f noise of SnO2 nanowire transistors (2008)

Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J, ...

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to...

Fully transparent thin-film transistors based on aligned single-walled carbon nanotube arrays (2008)

Kim, Sunkook, Ju, Sanghyun, Janes, David B, Mohammadi, Saeed

The work describes the first demonstration of fully transparent thin-film-transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWNT) arrays with indium tin oxide (ITO)...

Self-aligned wafer-level integration technology with an embedded faraday cage for substrate crosstalk suppression (2008)

Sharifi, Hasan, Mohammadi, Saeed

A modification to a recently developed chip/wafer integration technology has proven to be very effective in suppressing the substrate crosstalk for mixed signal systems. In this implementation,...

Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements (2008)

Ju, Sanghyun, Kim, Sunkook, Mohammadi, Saeed, Janes, David B

Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and SiO2 gate insulators were characterized by low-frequency noise and variable temperature current-voltage...

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors (2007)

Kim, Sunkook, Xuan, Yi, Ye, P. D., Mohammadi, Saeed, Back, J H, Shim, Moonsub

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are...

Heterogeneous wafer-scale circuit architectures (2007)

Katehi, Linda, Chappell, William J., Mohammadi, Saeed, Margomenos, Alexandros, Steer, Michael

Future military and commercial communication systems require a new generation of circuits with cognitive, deployable, agile, versatile, survivable, and sustainable capabilities. For these future...

High-Q micromachined three-dimensional integrated inductors for high-frequency applications (2007)

Weon, Dae-Hee, Jeong, Jong-Hyeok, Mohammadi, Saeed

Three-dimensional micromachined inductors are fabricated on high-resistivity (10 k Omega cm) and low-resistivity (10 Omega cm) Si substrates using a stressed metal technology. On high-resistivity Si...