Saeed Mohammadi

Publication List Details

Period

2000 - 2009

Number

19

Co-Authors

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits (2009)

Rabieirad, Laleh, Martinez, Edgar J, Mohammadi, Saeed

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with...

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits (2009)

Rabieirad, Lelah, Martinez, Edgar J., Mohammadi, Saeed

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with...

A nanofluidic channel with embedded transverse nanoelectrodes (2009)

Maleki, T, Mohammadi, Saeed, Ziaie, Babak

In this paper, we demonstrate fabrication and characterization of a nanofluidic channel with embedded transverse nanoelectrodes using a combination of conventional photolithography and focused ion...

A Low Phase Noise 10 GHz VCO in 0.18�m CMOS Process (2009)

Tae-young Choi, Hanil Lee, Saeed Mohammadi

Abstract — A fully integrated 10 GHz LC voltage controlled oscillator is presented. The VCO is implemented in 6 metal 0.18�m CMOS process. The VCO achieves a wide tuning range of 20.1 % (10.20...

Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits (2009)

Sharifi, Hasan, Lahiji, Rosa R, Lin, Han-Chung, Ye, P. D., Katehi, Linda P.B., Mohammadi, Saeed

Investigation of Parylene-N (Pa-N) as a flexible substrate, multilayer dielectric material, and passivation layer for microwave and millimeter-wave integrated circuits is presented. For the first...

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes (2009)

Kim, Sunkook, Ju, Sanghyun, Back, Ju Hee, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...

Fully transparent thin-film transistors (FFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs...

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis (2008)

Kim, S, Xuan, Y, Ye, P. D., Mohammadi, Saeed, Lee, S W

Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on...

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes (2008)

Kim, Sunkook, Ju, Sanghyun, Back, J H, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...

The development of mechanically flexible and/or optically transparent electronics could enable next-generation electronics technologies, which would be easy-to-read, light-weight, unbreakable,...

1/f noise of SnO2 nanowire transistors (2008)

Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J, ...

The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to...

Fully transparent thin-film transistors based on aligned single-walled carbon nanotube arrays (2008)

Kim, Sunkook, Ju, Sanghyun, Janes, David B, Mohammadi, Saeed

The work describes the first demonstration of fully transparent thin-film-transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWNT) arrays with indium tin oxide (ITO)...

Self-aligned wafer-level integration technology with an embedded faraday cage for substrate crosstalk suppression (2008)

Sharifi, Hasan, Mohammadi, Saeed

A modification to a recently developed chip/wafer integration technology has proven to be very effective in suppressing the substrate crosstalk for mixed signal systems. In this implementation,...

Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements (2008)

Ju, Sanghyun, Kim, Sunkook, Mohammadi, Saeed, Janes, David B

Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and SiO2 gate insulators were characterized by low-frequency noise and variable temperature current-voltage...

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric (2007)

Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...

3-D integration of 10-GHz filter and CMOS receiver front-end (2007)

Choi, Tae-young, Sharifi, Hasan, Sigmarsson, Hjalti, Chappell, William J., Mohammadi, Saeed, Katehi, Linda

A 10-GHz filter/receiver module is implemented in a novel 3-D integration technique suitable for RF and microwave circuits. The receiver designed and fabricated in a commercial 0.18-mu m CMOS process...

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics (2007)

Lin, H C, Kim, S K, Chang, D, Xuan, Y, Mohammadi, Saeed, Ye, P. D., ...

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are...

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors (2007)

Kim, Sunkook, Xuan, Yi, Ye, P. D., Mohammadi, Saeed, Back, J H, Shim, Moonsub

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are...

Heterogeneous wafer-scale circuit architectures (2007)

Katehi, Linda, Chappell, William J., Mohammadi, Saeed, Margomenos, Alexandros, Steer, Michael

Future military and commercial communication systems require a new generation of circuits with cognitive, deployable, agile, versatile, survivable, and sustainable capabilities. For these future...

High-Q micromachined three-dimensional integrated inductors for high-frequency applications (2007)

Weon, Dae-Hee, Jeong, Jong-Hyeok, Mohammadi, Saeed

Three-dimensional micromachined inductors are fabricated on high-resistivity (10 k Omega cm) and low-resistivity (10 Omega cm) Si substrates using a stressed metal technology. On high-resistivity Si...