Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits (2009)
Rabieirad, Laleh, Martinez, Edgar J, Mohammadi, Saeed
A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with...
Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits (2009)
Rabieirad, Lelah, Martinez, Edgar J., Mohammadi, Saeed
A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with...
A nanofluidic channel with embedded transverse nanoelectrodes (2009)
Maleki, T, Mohammadi, Saeed, Ziaie, Babak
In this paper, we demonstrate fabrication and characterization of a nanofluidic channel with embedded transverse nanoelectrodes using a combination of conventional photolithography and focused ion...
A Low Phase Noise 10 GHz VCO in 0.18�m CMOS Process (2009)
Tae-young Choi, Hanil Lee, Saeed Mohammadi
Abstract — A fully integrated 10 GHz LC voltage controlled oscillator is presented. The VCO is implemented in 6 metal 0.18�m CMOS process. The VCO achieves a wide tuning range of 20.1 % (10.20...
Sharifi, Hasan, Lahiji, Rosa R, Lin, Han-Chung, Ye, P. D., Katehi, Linda P.B., Mohammadi, Saeed
Investigation of Parylene-N (Pa-N) as a flexible substrate, multilayer dielectric material, and passivation layer for microwave and millimeter-wave integrated circuits is presented. For the first...
Kim, Sunkook, Ju, Sanghyun, Back, Ju Hee, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...
Fully transparent thin-film transistors (FFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs...
Kim, S, Xuan, Y, Ye, P. D., Mohammadi, Saeed, Lee, S W
Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on...
Kim, Sunkook, Ju, Sanghyun, Back, J H, Xuan, Yi, Ye, P. D., Shim, Moonsub, ...
The development of mechanically flexible and/or optically transparent electronics could enable next-generation electronics technologies, which would be easy-to-read, light-weight, unbreakable,...
1/f noise of SnO2 nanowire transistors (2008)
Ju, Sanghyun, Chen, Pochiang, Zhou, Chongwu, Ha, Young-geun, Facchetti, Antonio, Marks, Tobin J, ...
The low frequency (1/f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (S-I) is found to...
Fully transparent thin-film transistors based on aligned single-walled carbon nanotube arrays (2008)
Kim, Sunkook, Ju, Sanghyun, Janes, David B, Mohammadi, Saeed
The work describes the first demonstration of fully transparent thin-film-transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWNT) arrays with indium tin oxide (ITO)...
Sharifi, Hasan, Mohammadi, Saeed
A modification to a recently developed chip/wafer integration technology has proven to be very effective in suppressing the substrate crosstalk for mixed signal systems. In this implementation,...
Ju, Sanghyun, Kim, Sunkook, Mohammadi, Saeed, Janes, David B
Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and SiO2 gate insulators were characterized by low-frequency noise and variable temperature current-voltage...
Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...
3-D integration of 10-GHz filter and CMOS receiver front-end (2007)
Choi, Tae-young, Sharifi, Hasan, Sigmarsson, Hjalti, Chappell, William J., Mohammadi, Saeed, Katehi, Linda
A 10-GHz filter/receiver module is implemented in a novel 3-D integration technique suitable for RF and microwave circuits. The receiver designed and fabricated in a commercial 0.18-mu m CMOS process...
Lin, H C, Kim, S K, Chang, D, Xuan, Y, Mohammadi, Saeed, Ye, P. D., ...
Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are...
Kim, Sunkook, Xuan, Yi, Ye, P. D., Mohammadi, Saeed, Back, J H, Shim, Moonsub
High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are...
Heterogeneous wafer-scale circuit architectures (2007)
Katehi, Linda, Chappell, William J., Mohammadi, Saeed, Margomenos, Alexandros, Steer, Michael
Future military and commercial communication systems require a new generation of circuits with cognitive, deployable, agile, versatile, survivable, and sustainable capabilities. For these future...
High-Q micromachined three-dimensional integrated inductors for high-frequency applications (2007)
Weon, Dae-Hee, Jeong, Jong-Hyeok, Mohammadi, Saeed
Three-dimensional micromachined inductors are fabricated on high-resistivity (10 k Omega cm) and low-resistivity (10 Omega cm) Si substrates using a stressed metal technology. On high-resistivity Si...
Dissertation (Ph.D.)--University of Michigan