Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures (2002)
Ohtake, Akihiro, Tsukamoto, Shiro, Pristovsek, Markus, Koguchi, Nobuyuki, Ozeki, Masashi
Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at...
As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy (2002)
Tsukamoto, Shiro, Pristovsek, Markus, Orr, Bradford G., Ohtake, Akihiro, Bell, Gavin R., Koguchi, Nobuyuki
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a...
Tsukamoto, Shiro, Pristovsek, Markus, Orr, Bradford G., Ohtake, Akihiro, Bell, Gavin R., Koguchi, Nobuyuki
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy...