Stephen E. Holland

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping (2008)

Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...

Fully Depleted Charge-Coupled Devices (2006)

Holland, Stephen E.

We have developed fully depleted, back-illuminated CCDs that build upon earlier research and development efforts directed towards technology development of silicon-strip detectors used in...

High-voltage-compatible, fully depleted CCDs (2006)

Holland, Stephen E., Bebek, Chris J., Dawson, Kyle S., Emes, John E., Fabricius, Max H., Fairfield, Jessaym A., ...

We describe charge-coupled device (CCD) development activities at the Lawrence Berkeley National Laboratory (LBNL). Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,...

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping (2006)

Blacksberg, Jordana, Hoenk, Michael E., Elliott, S. Tom, Holland, Stephen E., Nikzad, Shouleh

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high...

Fully depleted back-illuminated p-channel CCD development (2003)

Bebek, Chris J., Bercovitz, John H., Groom, Donald E., Holland, Stephen E., Kadel, Richard W., Karcher, Armin, ...

An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described,...

Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon (2002)

Holland, Stephen E., Groom, Donald E., Palaio, Nick P., Stover, Richard J., Wei, Mingzhi

Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 $\Omega$-cm, allows for depletion depths of several hundred microns....