T. Billon

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3 (2005)

Fillot, F, Morel, Thierry; U0048260, Minoret, S, Matko, I, Maitrejean, S, Guillaumot, B, ...

This study reports for the first time, the evaluation of the work function and thermal stability of TiN gate material for deep sub-micron CMOS, elaborated by using metal organic atomic layer...

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates (2005)

Leys, Frederik, Richard, Olivier, Van Steenbergen, Jan, Winderickx, Gillis, ...

Low frequency noise in silicon carbide Schottky diodes (1997)

Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such...

Experimental investigation of noise sources in silicon carbide Schottky barriers (1996)

Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general...