Electron-phonon interaction in suspended Si double quantum dots (2009)
Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, ...
Ferrus, T., Tanner, M., Podd, G., Chapman, P., Williams, D. A.
We report on the observation of charge motion in an isolated phosphorous-doped silicon double-dot system by a single electron transistor. This is characterised by abrupt and unusually large shifts in...
Study of single-electron transport via suspended double silicon quantum dots (2009)
Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S, ...
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot (2009)
Kodera, T., Ferrus, T., Nakaoka, T., Podd, G., Tanner, M., Williams, D., ...
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low...
Ferrus, T., Hasko, D. G., Morrissey, Q. R., Burge, S. R., Freeman, E. J., French, M. J., ...
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single...
Single shot measurement of a silicon single electron transistor (2008)
Hasko, D. G., Ferrus, T., Morrissey, Q. R., Burge, S. R., Freeman, E. J., French, M. J., ...
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature...
Ferrus, T., Goutiers, B., Ressier, L., Peyrade, J. P., Galibert, J., Porto, J. A., ...
We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by...
Ferrus, T., Goutiers, B., Galibert, J., Ressier, L., Peyrade, J. P.
Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. This effect has been...
Ferrus, T., Goutiers, B., Ressier, L., Peyrade, J. P., Porto, J. A., Sanchez-dehesa, J.
The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire superlattices. The...
Broadening processes in GaAs delta-doped quantum wire superlattices (2007)
Ferrus, T., Goutiers, B., Galibert, J., Michelini, F.
We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice...
Variation of the hopping exponent in disordered silicon MOSFETs (2007)
Ferrus, T., George, R., Barnes, C. H. W., Lumpkin, N., Paul, D. J., Pepper, M.
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying...
Single shot measurement of a silicon single electron transistor (2005)
Hasko, D. G., Ferrus, T., Morrissey, Q. R., Burge, S. R., Freeman, E. J., French, M. J., ...
We have fabricated a custom cryogenic CMOS integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed to implement single shot...
Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs (2005)
Ferrus, T., George, R., Barnes, C. H. W., Lumpkin, N., Paul, D. J., Pepper, M.
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into...
Activation mechanisms in sodium-doped Silicon MOSFETs (2005)
Ferrus, T., George, R., Barnes, C. H. W., Lumpkin, N., Paul, D. J., Pepper, M.
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at...
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs (2005)
Ferrus, T., George, R., Barnes, C. H. W., Lumpkin, N., Paul, D. J., Pepper, M.
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the...