Thermally Stimulated Current Dosimetry. (2002)
Gates,D. C., Krehl,P., Magee,T. J., Armistead,R. A.
This report describes an experimental program to develop a radiation dosimeter system based upon the measurement of thermally stimulated conductivity (TSC) in dielectric materials. These materials...
Ion Implantation in Cadmium Telluride. (2002)
Magee,T. J., Gibbons,J., Bean,J., Peng,J., Armistead,R. A.
Results of investigations conducted on cadmium telluride (CdTe) samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission...
Laser Damage Phenomena in Materials. (2002)
Magee,T. J., Peng,J., Armistead,R. A.
This report describes progress on a program to characterize laser-induced damage in selected materials and to identify the role of microstructural defects and radiation damage in altering infrared...
Investigation of Solid-Solid Reactions in Metal Films on Silicon. (2002)
Magee,T. J., Peng,J., Armistead,R. A.
Investigations were conducted on solid-solid reactions in gold films evaporated on silicon substrates at deposition temperatures below the eutectic point (370 C). Both air- and vacuum-annealed...
Encapsulation and Annealing of Sulfur and Selenium Implanted Gallium Arsenide. (2002)
Magee,T. J., Gibbons,J. F., Lidow,A., Peng,J., Ammar,E.
This report describes progress on a program to investigate encapsulation films used as annealing caps on ion implanted GaAs samples and to develop alternative procedures and techniques for improving...
Solid-Solid Reactions in Metal Films on Silicon. (2002)
Investigations were conducted on solid-solid reactions in gold and aluminum thin films formed on Si substrates at deposition temperatures below the eutectic points. Additional research was also...
Improvement in GaAs Device Yield and Performance through Substrate Defect Gettering. (2002)
Magee,T. J., Peng,J., Hong,J., Armistead,R. A.
The use of mechanically produced back-surface-damage as a means of gettering impurities and defects in GaAs wafers has been investigated. Comparative analyses have been done on both ion implantation...
Improvement in GaAs Device Yield and Performance through Substrate Defect Gettering. (2002)
Magee,T. J., Peng,J., Hong,J., Armistead,R. A.
The gettering of Cr and front-surfaces defects by mechanically produced back-surface damage in semi-insulating GaAs wafers has been investigated. It has been shown that improved VPE layers can be...
A Study of Low-Temperature Processes in Non-Equilibrium Electronic States. (2002)
Wang,T. C., Magee,T. J., Peng,J., Armistead,R. A.
Primary focus was directed to experimental studies of the electrical behavior of weakly-coupled superconductors. Two types of superconducting devices were used, Josephson tunnel junctions and...
Improvement in GaAs Device Yield and Performance through Substrate Defect Gettering. (2002)
Magee,T. J., Peng,J., Ormond,R., Armistead,R. A., Malbon,M.
The use of mechanically-produced, back-surface damage as a means of gettering impurities and defects in GaAs wafers has been investigated. Comparative analyses have been done on both ion implantation...
Seeded and Limited Seeding Regrowth of Si over SiO2 by CW Laser Annealing, (2002)
Magee,T. J., Palkuti,L. J., Ormond,R., Leung,C.
Prepared in cooperation with Amdahl Corp., Sunnyvale, CA.
An Investigation of Impurity Redistribution Effects and Solubility/Diffusivity of Cr in GaAs. (2002)
Magee,T. J., Leung,C., Ormond,R., Armistead,R. A., Stevenson,D.
Experiments have begun on the investigation of the thermodynamics and phase equilibrium of the Ga-Cr-As system and the solubility and diffusivity of Cr in GaAs under selected conditions of...
Investigation of Impurity Redistribution Effects and Solubility/Diffusivity of Cr IN GaAs. (2002)
Magee,T. J., Leung,C., Ormond,R., Armistead,R. A., Stevenson,D.
Experiments have begun on the investigation of the thermodynamics and phase equilibrium of the Ga-Cr-As system and the solubility and diffusivity of Cr in GaAs under selected conditions of...
Silicon Quality: A Consideration for VHSI Circuit Development. (2002)
Magee,T. J., Leung,C., Ormond,R., Palkuti,L. J.
A detailed evaluation of the quality of silicon wafers from representative domestic and foreign vendors was made. To avoid pre-selection of wafers by vendors, material was obtained directly from...
Magee,T. J., Leung,C., Ormond,R., Armistead,R. A.
The defect structure in CVD Si layers on sapphire were investigated before and after scanning laser annealing. Prior to laser annealing, the films were characterized by the presence of stacking...
An Investigation of the Solubility and Diffusivity of Chromium in Gallium Arsenide. (2002)
Magee,T. J., Woolhouse,G. R., Stevensen,D. A., Deal,M.
Phase equilibria in the Ga-As-Cr system have been studied and determined between room temperature and 1300 C by differential thermal analysis and x-ray diffraction. Solubility studies of Cr in GaAs...
Magee,T. J., Leung,C., Ormond,R. D., Armistead,R. A.
Solid phase regrowth of Silicon-on-sapphire has been investigated in the Si (amorphous)/Al(poly) Al2O3 (crystal) system. Using transmission electron microscopy, scanning electron microscopy, Auger...
Defects and Impurities in Mercury Cadmium Telluride. (1998)
Over the past seven years since the initial identification of defect distributions in CdTe/CdZnTe (CdTe) substrates and epitaxial layers of HgCdTe, improvements in both substrate near-surface quality...