T. Kimoto

Power conversion with SiC devices at extremely high ambient temperatures (2007)

Funaki, T, Balda, JC, Junghans, J, Kashyap, AS, Mantooth, HA, Barlow, F, ...

Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers (2007)

Danno, K, Kimoto, T

Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation (2007)

Danno, K, Nakamura, D, Kimoto, T

4H-SiC lateral double RESURF MOSFETs with low ON resistance (2007)

Noborio, M, Suda, J, Kimoto, T

Impacts of growth parameters on deep levels in n-type 4H-SiC (2007)

Danno, K, Hori, T, Kimoto, T

Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy (2007)

Reshanov, S. A., Pensl, G., Danno, K., Kimoto, T., Hishiki, S., Ohshima, T., ...

Thermal stability of defects in p-type as-grown 6H-SiC (2007)

Alfieri, G., Kimoto, T.

A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy (2007)

Suda, J., Horita, M., Armitage, R., Kimoto, T.

m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates (2007)

Armitage, R., Horita, M., Suda, J., Kimoto, T.

Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons (2006)

Danno, K, Kimoto, T

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy (2006)

Horita, M, Suda, J, Kimoto, T

Optical cross sections of deep levels in 4H-SiC (2006)

Kato, M, Tanaka, S, Ichimura, M, Arai, E, Nakamura, S, Kimoto, T, ...

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006)

Kamiyama, S, Maeda, T, Nakamura, Y, Iwaya, M, Amano, H, Akasaki, I, ...

Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates (2006)

Armitage, R, Suda, J, Kimoto, T

Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates (2006)

Armitage, R, Suda, J, Kimoto, T

Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics (2006)

Negoro, Y, Kimoto, T, Kataoka, M, Takeuchi, Y, Malhan, RK, Matsunami, H

High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers (2006)

Danno, K, Kimoto, T

Characterization of ZrB2(0001) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth (2006)

Armitage, R, Suda, J, Kimoto, T

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC (2006)

Kamiyama, S, Maeda, T, Nakamura, Y, Iwaya, M, Amano, H, Akasaki, I, ...

Structure analysis of ZrB2(0001) surface prepared by ex situ HF treatment (2006)

Suto, H, Fujii, S, Miyamae, N, Armitage, RD, Suda, J, Kimoto, T, ...

Epitaxial growth of 4H-SIC on 4 degrees off-axis (0001) and (0001) substrates by hot-wall chemical vapor deposition (2006)

Wada, K, Kimoto, T, Nishikawa, K, Matsunami, H

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy (2006)

Horita, M, Suda, J, Kimoto, T

Optical cross sections of deep levels in 4H-SiC (2006)

Kato, M, Tanaka, S, Ichimura, M, Arai, E, Nakamura, S, Kimoto, T, ...

Source of surface morphological defects formed on 4H-SiC homoepitaxial films (2006)

Okada, T, Ochi, K, Kawahara, H, Tomita, T, Matsuo, S, Yamaguchi, M, ...

Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage (2006)

Funaki, T, Matsuzaki, S, Kimoto, T, Hikihara, T

Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons (2006)

Danno, K, Kimoto, T

Epitaxial growth of 4H-SiC{0001} and reduction of deep levels (2006)

Kimoto, T, Wada, K, Danno, K

1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET (2005)

Kimoto, T, Kawano, H, Suda, J

Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) (2005)

Negoro, Y, Kimoto, T, Matsunami, H

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes (2005)

Fujiwara, H, Kimoto, T, Tojo, T, Matsunami, H

Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy (2005)

Danno, K, Kimoto, T, Matsunami, H

Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) (2005)

Kimoto, T, Kosugi, H, Suda, J, Kanzaki, Y, Matsunami, H

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001) (2005)

Negoro, Y, Kimoto, T, Matsunami, H

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film (2005)

Tomita, T, Matsuo, S, Okada, T, Kimoto, T, Matsunami, H, Mitani, T, ...

Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy (2005)

Danno, K, Kimoto, T, Matsunami, H

Technological aspects of ion implantation in SiC device processes (2005)

Negoro, Y, Kimoto, T, Matsunami, H

Interface properties of metal-oxide-semiconductor structures on 4H-SiC{0001} and (112(-)over-bar) formed by N2O oxidation (2005)

Kimoto, T, Kanzaki, Y, Noborio, M, Kawano, H, Matsunami, H

Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD (2005)

Wada, A, Kimoto, T, Nishikawa, K, Matsunami, H

Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS (2005)

Danno, K, Kimoto, T, Matsunami, H

1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET (2005)

Kimoto, T, Kawano, H, Suda, J

Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes (2005)

Fujiwara, H, Kimoto, T, Tojo, T, Matsunami, H

Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) (2005)

Kimoto, T, Kosugi, H, Suda, J, Kanzaki, Y, Matsunami, H

Short-Channel Effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T, Matsunami, H

Selective embedded growth of 4H-SiC trenches in 4H-SiC(0001) substrates using carbon mask (2005)

Chen, Y, Kimoto, T, Takeuchi, Y, Malhan, RK, Matsunami, H

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes (2005)

Fujiwara, H, Kimoto, T, Tojo, T, Matsunami, H

Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition (2005)

Danno, K, Kimoto, T, Asano, K, Sugawara, Y, Matsunami, H

Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition (2005)

Fujiwara, H, Danno, K, Kimoto, T, Tojo, T, Matsunami, H

Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs (2005)

Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T

Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001) (2005)

Armitage, R, Nishizono, K, Suda, J, Kimoto, T

Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication (2005)

Kawano, H, Kimoto, T, Suda, J, Matsunami, H

Optical-capacitance-transient spectroscopy study for deep levels in 4H-SiC epilayer grown by cold wall chemical vapor deposition (2005)

Kato, M, Tanaka, S, Ichimura, M, Arai, E, Nakamura, S, Kimoto, T

4H-SiC epitaxial growth on SiC substrates with various off-angles (2005)

Saitoh, H, Kimoto, T

Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing (2005)

Negoro, Y, Kimoto, T, Matsunami, H

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters (2005)

Funaki, T, Balda, JC, Junghans, J, Jangwanitlert, A, Mounce, S, Barlow, FD, ...

Electrical activation of high-concentration aluminum implanted in 4H-SiC (2004)

Negoro, Y, Kimoto, T, Matsunami, H, Schmid, F, Pensl, G

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing (2004)

Negoro, Y, Kimoto, T, Matsunami, H

Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) (2004)

Negoro, Y, Katsumoto, K, Kimoto, T, Matsunami, H

Surface mechanisms in homoepitaxial growth on alpha-SiC {0001}-vicinal faces (2004)

Nakamura, S, Kimoto, T, Matsunami, H

Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap (2004)

Negoro, Y, Katsumoto, K, Kimoto, T, Matsunami, H

Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition (2004)

Chen, Y, Kimoto, T, Takeuchi, Y, Malhan, RK, Matsunami, H

Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition (2004)

Danno, K, Hashimoto, K, Saitoh, H, Kimoto, T, Matsunami, H

Towards high-quality AlN/SiC hetero-interface by controlling initial processes in molecular-beam epitaxy (2004)

Onojima, N, Kaido, J, Suda, J, Kimoto, T, Matsunami, H

Electrical activation of high-concentration aluminum implanted in 4H-SiC (2004)

Negoro, Y, Kimoto, T, Matsunami, H, Schmid, F, Pensl, G

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing (2004)

Negoro, Y, Kimoto, T, Matsunami, H

High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient (2004)

Kanzaki, Y, Kinbara, H, Kosugi, H, Suda, J, Kimoto, T, Matsunami, H

Robust 4H-SiC pn diodes fabricated using (1120) face (2004)

Negoro, Y, Kimoto, T, Matsunami, H

High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face (2004)

Danno, K, Kimoto, T, Matsunami, H

Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition (2004)

Chen, Y, Kimoto, T, Takeuchi, Y, Malhan, RK, Matsunami, H

Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition (2004)

Fujiwara, H, Danno, K, Kimoto, T, Tojo, T, Matsunami, H

Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) (2004)

Nakamura, S, Kimoto, T, Matsunami, H

600V 4H-SiC RESURF-type JFET (2004)

Fujikawa, K, Harada, S, Ito, A, Kimoto, T, Matsunami, H

Crystallographic defects under surface morphological defects of 4H-SiC homoepitaxial films (2004)

Okada, T, Kimoto, T, Yamai, K, Matsunami, H, Inoko, F

Low sheet resistance of high-dose aluminum implanted 4H-SiC using (11-20) face (2004)

Negoro, Y, Katsumoto, K, Kimoto, T, Matsunami, H, Schmid, F, Pensl, G

Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) (2004)

Negoro, Y, Katsumoto, K, Kimoto, T, Matsunami, H

4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET) (2004)

Kaido, J, Kimoto, T, Suda, J, Matsunami, H

Origin of leakage current in SiC Schottky barrier diodes at high temperature (2004)

Saitoh, HS, Kimoto, T, Matsunami, H

Defect formation in (0001)- and (1120)-oriented 4H-SiC crystals P+-Implanted at room temperature (2004)

Okada, T, Negoro, Y, Kimoto, T, Okamoto, K, Kujime, N, Tanaka, N, ...

4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication (2003)

Onojima, N, Suda, J, Kimoto, T, Matsunami, H

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers (2003)

Miura, M, Nakamura, S, Suda, J, Kimoto, T, Matsunami, H

Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8) (2003)

Kimoto, T, Hashimoto, K, Matsunami, H

High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes (2003)

Kimoto, T, Fujimiza, K, Shiomi, H, Matsunami, H

Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition (2003)

Kimoto, T, Hirao, T, Nakazawa, S, Shiomi, H, Matsunami, H

Hetero-interface properties of SiO2/4H-SiC on various crystal orientations (2003)

Matsunami, H, Kimoto, T, Yano, H

High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation (2003)

Negoro, Y, Kimoto, T, Matsunami, H

4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication (2003)

Onojima, N, Suda, J, Kimoto, T, Matsunami, H

Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions (2003)

Nakamura, S, Kimoto, T, Matsunami, H

Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface (2003)

Kimoto, T, Hirao, T, Fujihira, K, Kosugi, H, Danno, K, Matsunami, H