Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy (2007)
Pala, M. G., Hackens, B., Martins, F., Sellier, H., Bayot, V., Huant, S., ...
We study the relationship between the local density of states (LDOS) and the conductance variation $\Delta G$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans...
Imaging Electron Wave Functions Inside Open Quantum Rings (2007)
Martins, F., Hackens, B., Pala, M. G., Ouisse, T., Sellier, H., Wallart, X., ...
Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|\Psi|^{2}(x,y)$ in embedded mesoscopic quantum rings...
Imaging and controlling electron transport inside a quantum ring (2006)
Hackens, B., Martins, F., Ouisse, T., Sellier, H., Bollaert, S., Wallart, X., ...
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical...
Habrard, Florian, Ouisse, T., Stephan, O., Aubouy, Laurent, Gerbier, Philippe, Hirsch, Lionel, ...
ilole groups are known to present a high electron affinity. Initially, copolymn. of siloles with fluorene was aimed at improving electron injection into the polymer layer and so improving the...
Habrard, Florian, Ouisse, T., Stephan, O., Aubouy, Laurent, Gerbier, Philippe, Hirsch, Lionel, ...
ilole groups are known to present a high electron affinity. Initially, copolymn. of siloles with fluorene was aimed at improving electron injection into the polymer layer and so improving the...
A strange feature of Bohm's Theory of quantum motion (2002)
In the Bohm picture and one-dimensional case, we show that given an adequately chosen potential for characterising obstacles, one can derive laws of motion formally identical to that of special...
Self-Consistent Calculations in Silicon Carbide Inversion Layers. (1998)
Schroedinger's and Poisson's equations have been self-consistently solved in the Hartree approximation in order to study the behavior of electron inversion layers in the cubic form of silicon...
Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFET's. (1998)
Ouisse, T., Maude, D. K., Horiguchi, S., Ono, Y., Takahashi, Y., Murase, K., ...
Low frequency noise in silicon carbide Schottky diodes (1997)
Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such...
Experimental investigation of noise sources in silicon carbide Schottky barriers (1996)
Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general...