T. Sameshima

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices (2003)

Kamiya, T., Durrani, Z.A.K., Ahmed, H., Sameshima, T., Furuta, Y., Mizuta, Hiroshi, ...

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices (2003)

Kamiya, T., Durrani, Z. A. K., Sameshima, T., Furuta, Y., Mizuta, Hiroshi, ...

Pulsed Laser-Induced Amorphization of Silicon Films. (1998)

Sameshima, T., Usui, S.

Through laser-induced melting using a 30-ns pulsed XeCl excimer laser, the reversible transition from crystalline to amorphous silicon was observed on films deposited on quartz substrates. A...