Shen, T., Jiang, J., Yamamoto, A., Trociewitz, U. P., Schwartz, J., Hellstrom, E. E., ...
Bi2Sr2CaCu2O8+x is the only cuprate superconductor that can be made into a round-wire conductor form with a high enough critical current density Jc for applications. Here we show that the Jc(5 T,4.2...
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) (2009)
Shen, T., Gu, J. J., Xu, M., Wu, Y. Q., Bolen, M. L., Capano, M. A., ...
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting...
M, Xu, Wu, Y Q, Koybasi, O, Shen, T, Ye, P. D.
GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T, Wu, Y Q, Rokhinson, Leonid P, Engel, L W, Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nanoscale square antidot arrays have been fabricated on these...
Magneto-conductance Oscillations in Graphene Antidot Arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. R., Engel, L. W., Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these...
[Beizer 1995] B. Beizer, Black-Box Testing: Techniques for Functional Testing of (2008)
W. T. Tsai, R. Paul, T. Shen, B. Li, Distributed End-to-end, ...
[DoD 1999] DoD OASD C3I Investment and Acquisition, “Year 2000 Management
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y Q, Ye, P. D., Capano, Michael A, Xuan, Yi, Sui, Y, Qi, Minghao, ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics (2008)
Xuan, Yi, Wu, Y Q, Shen, T, Qi, Minghao, Capano, Michael A, Cooper, James A, ...
Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 10(8) cm/s and a room-temperature mobility of >15 000 cm(2)/V s. How to grow gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. P., Engel, L. W., Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.65Ga0.35As metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectric are...
Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...
Xuan, Y, Wu, Y Q, Lin, H C, Shen, T, Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound...
Yang, T, Xuan, Y, Zemlyanov, Dmitry, Shen, T, Wu, Y Q, Woodall, Jerry M, ...
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3...
Wu, Y Q, Xuan, Y, Shen, T, Ye, P. D., Cheng, Z, Lochtefeld, A
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75-40 mu m gate length fabricated on a semi-insulating substrate with...
High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric (2007)
Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., Ye, P. D.
The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry...
Wu, Y Q, Shen, T, Ye, P. D., Wilk, G D
The authors report on an Al2O3 gate oxide deposited on n-type GaN by atomic layer deposition technique. The high-frequency C-V characteristic shows deep-depletion behavior at room temperature due to...
Urrutia, G., Arabas, J., Autio, Karin, Brul, S., Hendrickx, M., Kakolewski, A., ...
Journal of Food Engineering Vol.83 Nr.2, 293 - 315
Doping effect of Pr6O11 on superconductivity and flux pinning of MgB2 bulk (2007)
Pan, X, Shen, T, Li, Guanzhong
Bulk samples of MgB2 doped with 0, 1, 3, and 5 wt% Pr6O11 nanopowder were prepared using a solid-state reaction route. The lattice constants of Pr6O11-doped MgB2 systematically increase with...
Stability and dynamics of of motorized particles crystals and glasses (2004)
Many of the large structures of the cell, such as the cytoskeleton, are assembled and maintained far from equilibrium. We study the stabilities of various structures for a simple model of such a...
A Self-adaptive Scope Allocation Scheme for Labeling Dynamic XML Documents (2004)
Shen, Y., Feng, L., Shen, T., Wang, B.
This paper proposes a self-adaptive scope allocation scheme for labeling dynamic XML documents. It is general, light-weight and can be built upon existing data retrieval mechanisms. Bayesian...
Lu, Q, Mei, S, Hu, W, Wu, FF, Ni, Y, Shen, T
In this paper, a new nonlinear decentralized disturbance attenuation excitation control for multi-machine power systems is proposed based on recursive design without linearization treatment. The...
Building Multi-Discipline, MultiFormat Digital Libraries Using Clusters and (1997)
Michael L. Nelson, Michael L. Nelson, Michaell Nelson, Co-chairsof Advisorycommittee, Dr. Kurt Maly, ...
Our objectivewas to study the feasibility of extending the Dienst protocol to enable a multi-discipline, multi-format digital library. technologies: cluster functionality and publishing buckets. We...
On Structural Diagnosis for Interconnects (1996)
By means of new tools that can extract realistic faults from the PCB layout, generate test vectors and simulate fault diagnosis, we evaluated the applicability of structural diagnosis methods for...
Realistic Fault Extraction for Boards (1996)
fault analysis Extraction of realistic faults in boards can improve test synthesis, fault coverage, diagnostic resolution and repair time. A methodology and a tool for board inductive fault analysis...
EFFECT OF SURFACE ROUGHNESS ON THE KAPITZA RESISTANCE (1981)
Shen, T., Castiel, D., Maradudin, A.
The Kapitza resistance due to acoustic phonons crossing a rough planar interface from liquid He into an isotropic solidis investigated, and its characteristic function, viz. the penetration...
EFFECT OF SURFACE ROUGHNESS ON THE KAPITZA RESISTANCE (1981)
Shen, T., Castiel, D., Maradudin, A.
The Kapitza resistance due to acoustic phonons crossing a rough planar interface from liquid He into an isotropic solidis investigated, and its characteristic function, viz. the penetration...