Takashi Fukui

Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy (2007)

Hua, Bin, Motohisa, Junichi, Ding, Ying, Hara, Shinjiroh, Fukui, Takashi

The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are...

Aharonov-Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes (2007)

Tsumura, Kohei, Nomura, Shintaro, Mohan, Pamela, Motohisa, Junichi, Fukui, Takashi

The oscillation of photoluminescence peak energies is observed in InAs quantum tubes depending on the magnetic flux through the tube. The oscillation is shown to be due to the Aharonov-Bohm effect of...

Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy (2006)

Hara, Shinjiroh, Fukui, Takashi

The authors report the self-assembly of hexagonal MnAs nanoclusters on GaInAs (111)B surfaces by metal-organic vapor phase epitaxy. The ferromagnetic behavior of the nanoclusters dominates the...

Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy (2006)

Hara, Shinjiroh, Fukui, Takashi

The authors report the self-assembly of hexagonal MnAs nanoclusters on GaInAs (111)B surfaces by metal-organic vapor phase epitaxy. The ferromagnetic behavior of the nanoclusters dominates the...

Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs∕InP (111)B layers by metal-organic vapor phase epitaxy (2006)

Hara, Shinjiroh, Fukui, Takashi

The authors report the self-assembly of hexagonal MnAs nanoclusters on GaInAs (111)B surfaces by metal-organic vapor phase epitaxy. The ferromagnetic behavior of the nanoclusters dominates the...

Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...

Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...

Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs...

Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...

Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...

Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires (2006)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP/InAs core-shell...

Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy (2005)

Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...

Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy (2005)

Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi

Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...

Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy (2005)

Nataraj, Devaraj, Ooike, Noboru, Motohisa, Junichi, Fukui, Takashi

Narrow wirelike openings were defined on SiO2-masked GaAs (001) substrates by electron-beam lithography and wet chemical etching methods. A one-dimensional GaAs channel-coupled InAs quantum dot...

Terahertz ultrasonic generation and detection in GaAs/AlGaAs quantum wells (2005)

Tachizaki, Takehiro, Matsuda, Osamu, Fukui, Takashi, Baumberg, Jeremy J., Wright, Oliver B.

High frequency ultrasonic pulse generation and detection are investigated in a sample with three embedded GaAs/Al0.3Ga0.7As quantum wells by means of ultrashort optical pulses. The experimental...

Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)

Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....

Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)

Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi

We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....

Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)

Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi

We report on the fabrication of GaAs hexagonal nanowires surrounded by (110) vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth....

Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy (2004)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...

Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy (2004)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...

Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy (2004)

Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy (2003)

Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy (2003)

Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi

Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy (2003)

Mohan, Premila, Nakajima, Fumito, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi

Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic...

Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates (2002)

Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...

Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates (2002)

Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi

We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...

Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates (2002)

Kim, Hyo Jin, Motohisa, Junichi, Fukui, Takashi

We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase...

GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices (2001)

Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi, 本久, 順一

We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...

GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices (2001)

Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi

We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...

GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices (2001)

Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, Fukui, Takashi

We describe a method for fabricating GaAs dot arrays and dot-wire coupled structures having periodic nanofacets which uses selective area metalorganic vapor phase epitaxy. First, a thin GaAs buffer...

普通炭素鋼におけるセメンタイトの均一粒状化について (1975)

福井, 昂, FUKUI, Takashi, フクイ, タカシ, Fukui, Takashi

In this report, the author studied the influences of heat treatment and forging on the uniform spheroization of cementite in three kinds of commercial carbon steels with carbon 0.21,0.49 and 1.07% by...

高炭素合金鋼の黒鉛化におよぼすCrおよび熱処理の影響 (1971)

福井, 昂, FUKUI, Takashi, フクイ, タカシ, Fukui, Takashi

The author made a study of the effect of metallogarphical factors on the rolling fatigue life of a carbon steel and alloy cast iron. Judging from these results, in case that carbide and graphite...

Restricted Expression of Shiga Toxin Binding Sites on Mucosal Epithelium of Mouse Distal Colon

Imai, Yasuyuki, Fukui, Takashi, Kurohane, Kohta, Miyamoto, Daisei, Suzuki, Yasuo, Ishikawa, Tomoyuki, ...

Shiga toxins (Stx) are some of the major virulence factors of enterohemorrhagic Escherichia coli strains such as serotype O157:H7. To explore how Stx might initially gain access to the bloodstream...

Restricted Expression of Shiga Toxin Binding Sites on Mucosal Epithelium of Mouse Distal Colon

Imai, Yasuyuki, Fukui, Takashi, Kurohane, Kohta, Miyamoto, Daisei, Suzuki, Yasuo, Ishikawa, Tomoyuki, ...

Shiga toxins (Stx) are some of the major virulence factors of enterohemorrhagic Escherichia coli strains such as serotype O157:H7. To explore how Stx might initially gain access to the bloodstream...

Lack of Shiga-like toxin binding sites in germinal centres of mouse lymphoid tissues

Imai, Yasuyuki, Fukui, Takashi, Ikegaya, Asano, Ishikawa, Tomoyuki, Ono, Yousuke, Kurohane, Kohta

B cells in germinal centres are known to express carbohydrate antigen CD77 in human lymphoid tissues. The CD77 antigen is specifically recognized by Shiga-like toxins (SLTs) that are produced by...