De Jaeger, J.C., Delage, S. L., Dambrine, G., Di Forte Poisson, M.A, Hoel, V., Lepilliet, S., ...
This study regards the low noise properties of X-bandGaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown onSiC or Si substrates. The HEMTs present very low...
Minko, A., Hoel, V., Dambrine, G., Gaquiere, C., Dejaeger, J-C, Cordier, Y., ...
High performances was achieved on AlGaN/GaN HEMTs based on Si(111). Devices with 0.17-µm and 0.3-µm gate lengths are fabricated on two different layer growth at TIGER laboratory. RF noise and power...
Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements (2004)
Charbonniaud, C., Gasseling, T., De Meyer, S., Quéré, R., Teyssier, J.P., Barataud, D., ...
A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results...
A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs (1998)
Hoel, V., Bollaert, S., Wallart, X., Grimbert, B., Lepilliet, S., Cappy, A.
A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small...