W. G. Sloof

Oxidation-induced crack healing in Ti3AlC2 ceramics (2008)

Song, G.M., Pei, Y.T., Sloof, W.G., Li, S.B., Zwaag, S. Van Der

Crack healing of Ti3AlC2 was investigated by oxidizing a partially pre-cracked sample. A crack near a notch was introduced into the sample by tensile deformation. After oxidation at 1100 °C in air...

A methodology to determine anisotropy effects in non-cubic coatings (2007)

Pei, Y.T., Song, G.M., Sloof, W.G.

Nanoindentation in combination with orientation imaging microscopy (OIM) has been employed to quantify the anisotropic linear elastic behavior in non-cubic thin films. In particular this novel...

Interface fracture behavior of zinc coatings on steel: Experiments and finite element calculations (2006)

Song, G.M., Sloof, W.G., Pei, Y.T.

Hot-dipped galvanized steels are widely used in the automotive industry. The formability and damage resistance of zinc coatings depend strongly on their microstructure and adhesion to the steel...

Promoting Exclusive α-Al2O3 Growth Upon High-Temperature Oxidation of NiCrAl Alloys: Experiment Versus Model Predictions (2005)

Nijdam, T. J., Jeurgens, L. P. H., Sloof, W. G.

Structural Ordering of Ultra-Thin, Amorphous Aluminium-Oxide Films (2005)

Snijders, P. C., Jeurgens, L. P. H., Sloof, W. G.

Structure and morphology of aluminium-oxide films formed by thermal oxidation of aluminium (2002)

Jeurgens, L. P. H., Sloof, W. G., Tichelaar, F. D., Mittemeijer, E. J.

Composition and chemical state of the ions of aluminium-oxide films formed by thermal oxidation of aluminium (2002)

Jeurgens, L. P. H., Sloof, W. G., Tichelaar, F. D., Mittemeijer, E. J.

Growth kinetics and mechanisms of aluminium-oxide films formed by thermal oxidation of aluminum (2002)

Jeurgens, L. P. H., Sloof, W. G., Tichelaar, F. D., Mittemeijer, E. J.

Kr incorporation in sputtered amorphous Si layers (1995)

Greuter, M.J.W., Niesen, L., Veen, A. Van, Hakvoort, R.A., Verwerft, M., ...

Amorphous Si layers were grown by krypton plasma sputter deposition at 310 °C. By pulsation of the substrate potential between 0 and 50 eV, the Kr concentration in the layers could be varied to a...