Exceptional Electron Transport Properties of In-rich InGaN (2008)
Jones, R.E., Yu, K.M., Walukiewicz, W., Li, S.X., Liliental-Weber, Z., ...
Compositional Modulation in InxGa1-xN (2008)
Liliental-Weber, Z., Zakharov, D.N., Yu, K.M., Ager III, J.W., Walukiewicz, W., Haller, E.E., ...
Relation between structural and optical properties of InN and InxGa1-xN thin films (2008)
Liliental-Weber, Z., Zakharov, D.N., Jasinski, J., Yu, K.M., Wu, J.W., Ager III, J.W., ...
Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption,...
Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices (2008)
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Baumann, E., ...
The authors present evidence for a distinct optical phonon progression in the nonlinear intersubband absorption spectra of electrons in a GaN/AlN superlattice. Femtosecond two-color pump-probe...
Tunneling effects and intersubband absorption in AlN/GaN superlattices (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Wu, H., Schaff, W. J., Eastman, L. F., ...
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures. For barrier thicknesses larger than about 25 Å, the optical intersubband...
Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices (2008)
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Baumann, E., ...
The authors present evidence for a distinct optical phonon progression in the nonlinear intersubband absorption spectra of electrons in a GaN/AlN superlattice. Femtosecond two-color pump-probe...
Tunneling effects and intersubband absorption in AlN/GaN superlattices (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Wu, H., Schaff, W. J., Eastman, L. F., ...
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures. For barrier thicknesses larger than about 25 Å, the optical intersubband...
High Electron Mobility InN (2007)
Jones, R.E., Li, S.X., Haller, E.E., Yu, K.M., Ager III, J.W., ...
Hofstetter, D., Despont, L., Garnier, M.G., Baumann, E., Giorgetta, F.R., Aebi, P., ...
The authors investigated a 1 mu m thick molecular beam epitaxy-grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray...
Superconductivity of InN with a well defined Fermi surface (2006)
Inushima, T., Kato, N., Maude, D. K., Lu, H., Schaff, W. J., Tauk, R., ...
In this report we present our recent investigation on the co-existence of superconducting and semiconducting properties in InN grown on sapphire (0001) by the use of MBE and MOCVD methods....
Evidence for p-type doping of InN (2005)
Jones, R.E., Yu, K.M., Li, S.X., Walukiewicz, W., Ager III, J.W., Haller, E.E., ...
Multiphonon Resonance Raman Scattering in InGaN (2005)
Ager III, J.W., Walukiewicz, W., Shan, W., Yu, K.M., Li, S.X., Haller, E.E., ...
Dopants and Defects in InN and InGaN Alloys (2005)
Walukiewicz, W., Jones, R.E., Li, S.X., Yu, K.M., Ager III, J.W., Haller, E.E., ...
Indium nitride: A narrow gap semiconductor (2002)
Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H., ...
Universal bandgap bowing in group III nitride alloys (2002)
Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Li, S.X., Haller, E.E., ...
Donor and acceptor concentrations in degenerate InN (2002)
Look, D.C., Lu, H., Schaff, W.J., Jasinski, J., Liliental-Weber, Z.
Absorption saturation studies of Landau levels in quasi-two-dimensional systems (2001)
L. S. Muratov, M. I. Stockman, L. N. Pandey, T. F. George, W. J. Li, B. D. Mccombe, ...
this paper, we present results of far-infrared and non-linear (magneto absorption saturation) experiments on Al 0.3 Ga 0.7 As/GaAs single heterostructure (SH), multiple quantum wells (MQW), and...
Topological Phase Diagram of a Two-Subband Electron System (1999)
Lee, X. Y., Jiang, H. W., Schaff, W. J.
We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall...
Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials. (1998)
Schaff, W. J., Offsey, S. D., Park, H., Eastman, L. F.
Strained layer GaInAs/GaAs heterostructures for improved high frequency high performance as a result of strained modified valence band structure have been investigated. A new laser structures has...
Absence of Floating Delocalized States in a Two-Dimensional Hole Gas (1998)
Dultz, S. C., Jiang, H. W., Schaff, W. J.
By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field...
Termination of the spin-resolved integer quantum Hall effect (1997)
Wong, L. W., Jiang, H. W., Palm, E., Schaff, W. J.
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given...
Universality and Phase Diagram around Half-filled Landau Level (1997)
Wong, L. W., Jiang, H. W., Schaff, W. J.
Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify...
Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells (1992)
Sha, W, Norris, T B, Schaff, W J, Meyer, K. E.
The authors have studied high-field parallel transport of photoinjected carriers in GaAs quantum wells using femtosecond optical spectroscopy. They have directly observed the transient nonequilibrium...
Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs, (1992)
Norris, T. B., Sha, W., Schaff, W. J., Song, X. J., Lillental-Weber, Z.
We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime...
Femtosecond Time-Resolved Studies of High-Field Parallel Transport in GaAs Quantum Wells, (1992)
Sha, W., Norris, T. B., Schaff, W. J.
Ballistic transport of electrons in semiconductors has recently been a topic of great interest. These studies are important because ballistic transport is expected to play a role in the operation of...
Offsey, S.D., Schaff, W.J., Tasker, P.J., Eastman, L.F., Ennen, H.
Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to...