Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications (2009)
Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., ...
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the...
Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field (2009)
Boubanga-Tombet, S., Sakowicz, M., Coquillat, D., Teppe, F., Knap, W., Dyakonov, M. I., ...
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the...
Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...
Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/GaAlAs transistors was investigated at cryogenic temperatures in quantizing magnetic fields....
Terahertz detection by the entire channel of high electron mobility transistors (2008)
Sakowicz, M., Lusakowski, J., Karpierz, K., Knap, W., Grynberg, M., Köhler, K., ...
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the...
Klimaatobservaties in Cabauw (2008)
Leijnse, H., Uijlenhoet, R., Bokhorst, J., Stricker, J.N.M., Russchenberg, H.W.J., Bosveld, F., ...
Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...
Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigated at 4 K as a function of the magnetic field B. The detection signal (a source - drain photovoltage...
New trends in terahertz electronics: Review (2006)
Tamosiunas, V., Seliuta, D., Juozapavicius, A., Sirmulis, E., Valusis, G., El Fatimy, A., ...
Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., ...
Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation....
Superconductivity of InN with a well defined Fermi surface (2006)
Inushima, T., Kato, N., Maude, D. K., Lu, H., Schaff, W. J., Tauk, R., ...
In this report we present our recent investigation on the co-existence of superconducting and semiconducting properties in InN grown on sapphire (0001) by the use of MBE and MOCVD methods....
Terahertz investigation of high quality indium nitride epitaxial layers (2005)
Meziani, Y. M., Maleyre, B., Sadowski, M. L., Ruffenach, S., Briot, O., Knap, W.
High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN (2005)
Siekacz, M., Dybko, K., Skierbiszewski, C., Knap, W., Wasilewski, Z. R., Maude, D. K., ...
Subterahertz Detection by High Electron Mobility Translators at Large Forward Gate Bias (2004)
Deng, Y., Knap, W., Rumyantsev, S., Gaska, R., Khan, A., Ryzhii, V.
The electron delay time associated with the electron propagation across the FET gate barrier layer under high positive gate bias is expected to induce a dynamic negative differential conductance and...
Knap, W., Fal'ko, V. I., Frayssinet, E., Lorenzini, P., Grandjean, N., Maude, D., ...
We present the results of high magnetic field (up to 30 T) and temperature (50 mK-80 K) dependent transport measurements on a 2DEG in GaN/AlGaN heterojunctions. A high mobility (above 60000 cm(2) V-1...
Optical detection of a 2DEG in GaN/AlGaN structures: High magnetic field studies (2004)
Chwalisz, B., Wysmolek, A., Stepniewski, R., Potemski, M., Knap, W., Baranowski, J., ...
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates (2000)
Frayssinet, E., Knap, W., Lorenzini, P., Grandjean, N., Massies, J., Skierbiszewski, C., ...
Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions. (1999)
Knap, W., Frayssinet, E., Sadowski, M. L., Skierbiszewski, C., Maude, D., Falko, V., ...
Weak Antilocalization and Spin Precession in Quantum Wells (1996)
Knap, W., Skierbiszewski, C., Zduniak, A., Litwin-Staszewska, E., Bertho, D., Kobbi, F., ...
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization...
Mass balance measurements in the Søndre Strømfjord area in the period 1990-1994 (1995)
Bintanja, R., Boot, W., Conrads, L.A., Duynkerke, P.G., ...
We present four years of mass balance measurements for a transcct in the ablation zone of the Greenland ice sheet (near Sondre Stromfjord, West Greenland). The measurements cover an altitude range of...
Vicente, P., Kavokin, A., Raymond, A., Lyapin, S., Zekentes, K., Dur, D., ...
We present an experimental and theoretical investigation of the oscillator strength of E1HH1 excitonic transition in the presence of the external magnetic field in thick GaAlAs/GaAs quantum well. We...
Vicente, P., Kavokin, A., Raymond, A., Lyapin, S., Zekentes, K., Dur, D., ...
We present an experimental and theoretical investigation of the oscillator strength of E1HH1 excitonic transition in the presence of the external magnetic field in thick GaAlAs/GaAs quantum well. We...
Vicente, P., Kavokin, A., Raymond, A., Lyapin, S., Zekentes, K., Dur, D., ...
We present an experimental and theoretical investigation of the oscillator strength of E1HH1 excitonic transition in the presence of the external magnetic field in thick GaAlAs/GaAs quantum well. We...