Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting (2009)
Chen, Q, Hubbard, G., Shields, Philip A, Liu, Chaowang, Allsopp, Duncan W E, Wang, W. N., ...
Subwavelength scale antireflection moth-eye structures in silicon were fabricated by a wafer-scale nanoimprint technique and demonstrated an average reflection of 1% in the spectral range from 400 to...
CFD optimisation of up-flow vertical HVPE reactor for GaN growth (2008)
Sytniewski, L. J., Lapkin, Alexei A, Stepanov, S., Wang, W. N.
An up-flow hot wall hydride vapour phase epitaxy (HVPE) reactor with a single stationary substrate was designed for the growth of thick free-standing GaN substrates. The influences of (i) the reactor...
Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy (2007)
Liu, C., Shields, P. A., Denchitcharoen, S., Stepanov, S., Gott, A., Wang, W. N.
A mixed pulsed and normal GaN epitaxial lateral overgrowth (ELO-GaN) by epitaxy metalorganic vapour phase epitaxy (MOVPE) is reported in this study. Monitoring by using an in situ spectroscopic...
Improving led extraction efficiency through surface patterning - art. no. 666914 (2007)
Charlton, M. D. B., Lee, T., Zoorob, M. E., Shields, P. A., Wang, W. N.
We investigate improvement in performance attainable by etching Photonic. Crystals and Photonic Quasicrystals (PQC) into the top emitting surface of LEDs (PQC-LEDs). We describe the physical...
Deposition of CVD diamond onto GaN (2006)
May, P. W., Tsai, H. Y., Wang, W. N., Smith, J. A.
A series of experiments have been performed to deposit continuous layers of CVD diamond onto epitaxial GaN films. Such diamond coatings would be useful to enhance the light extraction and heat...
In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry (2006)
Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E., ...
The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and...
High temperature refractive indices of GaN (2006)
Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., ...
Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a...
In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry (2006)
Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E., ...
Zhirnov, E., Stepanov, S., Gott, A., Wang, W. N., Shreter, Y. G., Tarkhin, D. V., ...
ICP etching of GaN, Al0.1Ga0.9N, and a laser diode (LD) structure with Cl-2-Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP...
Zhirnov, E., Stepanov, S., Wang, W. N., Shreter, Y. G., Takhin, D. V., Bochkareva, N. I.
The influence of cathode coverplate material on inductively coupled plasma etching of GaN and AlGaN with 1% and 10% of Al was investigated. It was revealed that coverplate material has a great impact...
Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor (2004)
Yakovlev, E. V., Talalaev, R. A., Makarov, Y. N., Yavich, B. S., Wang, W. N.
In this paper, we report on a combined modeling and experimental analysis of the GaN deposition behavior in the horizontal AIX 200/4 RF-S reactor. The study was aimed at revealing the effect of the...
Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R., Wang, W. N.
The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness...
Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R., Wang, W. N.
The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness...
High-temperature annealing of AlGaN: Stress, structural, and compositional changes (2003)
Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., ...
The effect of high-temperature annealing on stress in AlxGa1-xN in different ambients and at different temperatures was studied using ultraviolet micro-Raman spectroscopy. Low (x=0.08) and high...
Optically detected magnetic resonance of paired defects in as-grown magnesium-doped GaN (2003)
Davies, James, Aliev, Gazimagomed N., Bingham, Stephen J., Wolverson, Daniel, Stepanov, Sergey, Yavich, B, ...
Optically detected magnetic-resonance experiments on as-grown magnesium-doped GaN produced by metal-organic vapor phase epitaxy reveal the presence of a triplet state spectrum with a zero-field...
High-temperature annealing of AlGaN: Stress, structural, and compositional changes (2003)
Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., ...
Defects in GaN films studied by positron annihilation spectroscopy (2002)
Pi, X. D., Coleman, P. G., Tseng, C. L., Burrows, C. P., Yavich, B., Wang, W. N.
The annealing of n-type thin GaN films grown by metal-organic chemical vapour deposition in vacuum has been studied by beam-based positron annihilation spectroscopy. The results are consistent with a...
Defects in GaN films studied by positron annihilation spectroscopy (2002)
Pi, X. D., Coleman, P. G., Tseng, C. L., Burrows, C. P., Yavich, B., Wang, W. N.
Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T., Shreter, Y. G.
The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of...
Simulation of widebandgap multi-quantum well light emitting diodes (2001)
Oriato, D., Walker, A. B., Wang, W. N.
Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the...
Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes (2001)
D. Oriato, Alison B. Walker, W. N. Wang
Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the...
Haase, E.L., Hagelberg, R., Wang, W.N.
Nuclear Physics, A188(1972) S.89-96
Haase, E.L., Wang, W.N., Fawzi, M.A.
Nuclear Physics, A 172(1971) S.81-98
Investigation of T=O Excited States of `4He Using Three-Particle Reactions. (1970)
Haase, E.L., Hagelberg, R., Wang, W.N., Lin, E.K., Saylor, D.P., Fawzi, M.A.
Fruehjahrstagung der Dt.Physikal.Ges.in Eindhoven, 6.-10.April 1970. Verhandlungen der Dt.Physikal.Ges., R.6, Bd 5(1970) S.496-97
Investigation of excited states of the #a-particle by coincidence measurements (1969)
Haase, E.L., Hagelberg, R., Wang, W.N., Fawzi, M.A., Siebert, W.
Internat. conf. on clustering phenomena in nuclei, Bochum, 21.-24.7.1969