Stone, P. R., Alberi, K., Tardif, S. K. Z., Beeman, J. W., Yu, K. M., Walukiewicz, W., ...
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator...
Exceptional Electron Transport Properties of In-rich InGaN (2008)
Jones, R.E., Yu, K.M., Walukiewicz, W., Li, S.X., Liliental-Weber, Z., ...
Compositional Modulation in InxGa1-xN (2008)
Liliental-Weber, Z., Zakharov, D.N., Yu, K.M., Ager III, J.W., Walukiewicz, W., Haller, E.E., ...
Relation between structural and optical properties of InN and InxGa1-xN thin films (2008)
Liliental-Weber, Z., Zakharov, D.N., Jasinski, J., Yu, K.M., Wu, J.W., Ager III, J.W., ...
Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption,...
High Electron Mobility InN (2007)
Jones, R.E., Li, S.X., Haller, E.E., Yu, K.M., Ager III, J.W., ...
Evidence for p-type doping of InN (2005)
Jones, R.E., Yu, K.M., Li, S.X., Walukiewicz, W., Ager III, J.W., Haller, E.E., ...
Photoluminescence of Energetic Particle-Irradiated InxGa1-xN Alloys (2005)
Li, S.X., Jones, R.E., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III, J.W., ...
Multiband GaNAsP Quaternary Alloys (2005)
Yu, K.M., Walukiewicz, W., Ager III, J.W., Bour, D., Farshchi, R., Dubon, O.D., ...
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys (2005)
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager III, J. W., Wu, J., ...
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption...
Multiphonon Resonance Raman Scattering in InGaN (2005)
Ager III, J.W., Walukiewicz, W., Shan, W., Yu, K.M., Li, S.X., Haller, E.E., ...
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys (2005)
Li, S.X., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III, J.W., Wu, J., ...
Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN (2005)
Li, S.X., Yu, K.M., Jones, R.E., Wu, J., Walukiewicz, W., Ager III, J.W., ...
Dopants and Defects in InN and InGaN Alloys (2005)
Walukiewicz, W., Jones, R.E., Li, S.X., Yu, K.M., Ager III, J.W., Haller, E.E., ...
Mutual Passivation in Dilulte GaNxAs1-x Alloys (2005)
Yu, K.M., Walukiewicz, W., Wu, J., Mars, D.E., Scarpulla, M.A., Dubon, O.D., ...
Highly Mismatched Alloys for Intermediate Band Solar Cells (2005)
Walukiewicz, W., Yu, K.M., Wu, J., Ager III, J.W., Shan, W., Scrapulla, M.A., ...
Fermi level stabilization energy in group III-nitrides (2005)
Li, S.X., Yu, K.M., Wu, J., Jones, R.E., Walukiewicz, W., Ager III, J.W., ...
Nature of room-temperature photoluminescence in ZnO (2004)
Shan, W., Walukiewicz, W., Ager III, J.W., Yu, K.M., Yuan, H.B., Xin, H.P., ...
The effect of thin film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs (2004)
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Denlinger, J., Scarpulla, M.A., Liu, X., ...
On the crystalline structure, stoichiometry and band gap of InN thin films (2004)
Yu, K.M., Liliental-Weber, Z., Walukiewicz, W., Li, S.X., Jones, R.E., Shan, W., ...
Pressure-dependent photoluminescence study of ZnO nanowires (2004)
Shan, W., Walukiewicz, W., Ager III, J.W., Yu, K.M., Zhang, Y., Mao, S.S., ...
Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey (2004)
Scarpulla, M. A., Yu, K. M., Walukiewicz, W., Dubon, O. D.
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary...
Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning (2004)
Alberi, K., Minor, A., Scarpulla, M. A., Chung, S. J., Mars, D. E., Yu, K. M., ...
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice...
Effect of pressure on the luminescence emissions in CuGaSe2 (2004)
Shan, W., Walukiewicz, W., Wu, J., Yu, K.M., Ager III, J.W., Siebentritt, S., ...
Valence band hybridization in N-rich GaN1-xAsx alloys (2004)
Wu, J., Walukiewicz, W., Yu, K.M., Denlinger, J.D., Shan, W., Ager III, J.W., ...
Raman spectroscopy and time-resolved photoluminescence of BN and BxCyNz nanotubes (2004)
Wu, J., Han, Wei-Qiang, Walukiewicz, W., Ager III, J.W., Shan, W., Haller, E.E., ...
Synthesis and optical properties of II-O-VI highly mismatched alloys (2004)
Yu, K.M., Walukiewicz, W., Shan, W., Wu, J., Beeman, J.W., Scarpulla, M.A., ...
Band anticrossing in dilute nitrides (2003)
Shan, W., Yu, K.M., Walukiewicz, W., Wu, J., Ager III, J.W., Haller, E.E.
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps (2003)
Yu, K. M., Walukiewicz, W., Wu, J., Shan, W., Beeman, J. W., Scarpulla, M. A., ...
We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser...
Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting (2003)
Scarpulla, M.A., Daud, U., Yu, K.M., Monteiro, O., Liliental-Weber, Z., Zakharov, D., ...
Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys (2003)
Wojtowicz, T., Lim, W. L., Liu, X., Cywinski, G., Kutrowski, M., Titova, L. V., ...
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct...
Wojtowicz, T., Lim, W. L., Liu, X., Dobrowolska, M., Furdyna, J. K., Yu, K. M., ...
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors...
Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films (2003)
Chaiken, A., Nauka, K., Gibson, G. A., Lee, Heon, Yang, C. C., Wu, J., ...
Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk...
Fundamental Curie temperature limit in ferromagnetic GaMnAs (2003)
Yu, K. M., Walukiewicz, W., Wojtowicz, T., Lim, W. L., Liu, X., Bindley, U., ...
We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling,...
In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor (2003)
Wojtowicz, T., Cywinski, G., Lim, W. L., Liu, X., Dobrowolska, M., Furdyna, J. K., ...
A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb...
High-Temperature Hall Effect in Ga(1-x)Mn(x)As (2003)
Ruzmetov, D., Scherschligt, J., Baxter, David V., Wojtowicz, T., Liu, X., Sasaki, Y., ...
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a...
Origin of the large band-gap bowing in highly mismatched semiconductor alloys (2003)
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Miotkowski, I., ...
Photomodulated reflection, optical absorption, and photoluminescence spectroscopies have been used to measure the composition dependence of interband optical transitions in ZnSe1-xTex and ZnS1-xTex...
Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., Ager, J. W., Haller, E. E., ...
Optical absorption experiments were performed using diamond-anvil cells to measure the hydrostatic pressure dependence of the fundamental bandgap of ZnSe1-xTex alloys over the entire composition...
Fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAs (2002)
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Lim, W.L., Liu, X., Bindley, U., ...
Indium nitride: A narrow gap semiconductor (2002)
Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Haller, E.E., Lu, H., ...
Universal bandgap bowing in group III nitride alloys (2002)
Wu, J., Walukiewicz, W., Yu, K.M., Ager III, J.W., Li, S.X., Haller, E.E., ...
Thermodynamic limits to the maximum Curie temperature in Ga1-xMnxAs (2002)
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Kuryliszyn, I., Liu, X., Sasaki, Y., ...
Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature (2002)
Yu, K.M., Walukiewicz, W., Wojtowicz, T., Kuryliszyn, I., Liu, X., Sasaki, Y., ...
Band anticrossing in highly mismatched group II-VI semiconductor alloys (2001)
Yu, K.M., Wu, J., Walukiewicz, W., Beeman, J.W., Ager III, J.W., Haller, E.E., ...
Walukiewicz, W., De Boer, F. R., Fisk, Z., Jochemsen, R.
These are the proceedings of the 20th International Conference on Defects in Semiconductors, ICDS-20, which was held in Berkeley, California, between July 26-30, 1999. It has been 40 years since the...