Wai Kin Chim

First-Principles Study of Point Defects in LaAlO₃ (2007)

Zheng, J.X., Ceder, Gerbrand, Chim, Wai Kin, Choi, Wee Kiong

In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies...

Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)

Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.

Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...

Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)

Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.

Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...

First-Principles Study of Point Defects in LaAlO₃ (2007)

Zheng, J.X., Ceder, Gerbrand, Chim, Wai Kin, Choi, Wee Kiong

In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies...

Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study (2005)

Zheng, J.X., Ceder, Gerbrand, Maxisch, T., Chim, Wai Kin, Choi, Wee Kiong

Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is...

TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process (2005)

Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...

Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron...

TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process (2005)

Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...

Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission...

Native Point Defects in yttria as a High-Dielectric-Constant Gate Oxide Material: A First-Principles Study (2005)

Zheng, J.X., Ceder, Gerbrand, Maxisch, T., Chim, Wai Kin, Choi, Wee Kiong

Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃...

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering (2004)

Kan, Eric Win Hong, Koh, B.H., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction....

Oblique Angle Deposition of Germanium Film on Silicon Substrate (2004)

Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Fitzgerald, Eugene A.

The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87°...

Oblique Angle Deposition of Germanium Film on Silicon Substrate (2004)

Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Fitzgerald, Eugene A.

The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at...

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering (2004)

Kan, Eric Win Hong, Koh, B.H., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction....

Charge storage in nanocrystal systems: Role of defects? (2003)

Kan, Eric Win Hong, Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that...

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness (2003)

Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., ...

The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer...

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness (2003)

Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., ...

The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer...

Charge storage in nanocrystal systems: Role of defects? (2003)

Kan, Eric Win Hong, Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For...

Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device (2003)

Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, ...

A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon...

Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks (2003)

Lei, Y., Teo, L.W., Yeong, K.S., See, Y.H., Chim, Wai Kin, Choi, Wee Kiong, ...

Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the...

Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications (2003)

Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry...

Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications (2003)

Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆...

Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks (2003)

Lei, Y., Teo, L.W., Yeong, K.S., See, Y.H., Chim, Wai Kin, Choi, Wee Kiong, ...

Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the...

Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device (2003)

Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, ...

A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon...

Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals (2002)

Heng, C.L., Choi, Wee Kiong, Chim, Wai Kin, Teo, L.W., Ho, Vincent, Tjiu, W.W., ...

A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm)...

Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices (2002)

Teo, L.W., Heng, C.L., Ho, V., Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, ...

A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal...

Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices (2002)

Teo, L.W., Heng, C.L., Ho, V., Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, ...

A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation...

Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals (2002)

Heng, C.L., Choi, Wee Kiong, Chim, Wai Kin, Teo, L.W., Ho, Vincent, Tjiu, W.W., ...

A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was...