First-Principles Study of Point Defects in LaAlO₃ (2007)
Zheng, J.X., Ceder, Gerbrand, Chim, Wai Kin, Choi, Wee Kiong
In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies...
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...
Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Chi, D.Z., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach...
Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Chi, D.Z., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach...
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...
First-Principles Study of Point Defects in LaAlO₃ (2007)
Zheng, J.X., Ceder, Gerbrand, Chim, Wai Kin, Choi, Wee Kiong
In this study, the native point defects including oxygen vacancy and interstitial, metal (La, Al) vacancy and interstitial, and metal antisite in perovskite LAO are studied. Defect formation energies...
Zheng, J.X., Ceder, Gerbrand, Maxisch, T., Chim, Wai Kin, Choi, Wee Kiong
Yttria (Y₂O₃) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in Y₂O₃ is...
Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron...
Effect of Oxygen on Ni-Silicided FUSI Metal Gate (2005)
Yu, H.P., Pey, Kin Leong, Choi, Wee Kiong, Chi, D.Z., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate...
Effect of Oxygen on Ni-Silicided FUSI Metal Gate (2005)
Yu, H.P., Pey, Kin Leong, Choi, Wee Kiong, Chi, D.Z., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate...
Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiOâ) system have been studied based on the Ge content of co-sputtered Ge-SiOâ films using transmission...
Zheng, J.X., Ceder, Gerbrand, Maxisch, T., Chim, Wai Kin, Choi, Wee Kiong
Yttria (YâOâ) has become a promising gate oxide material to replace silicon dioxide in metal-oxide-semiconductor (MOS) devices. The characterization of native point defect in YâOâ...
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects (2005)
Chang, Choon Wai, Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, ...
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in...
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects (2005)
Chang, Choon Wai, Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, ...
Three terminal âdotted-Iâ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found...
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering (2004)
Kan, Eric Win Hong, Koh, B.H., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction....
Oblique Angle Deposition of Germanium Film on Silicon Substrate (2004)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Fitzgerald, Eugene A.
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87°...
Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate (2004)
Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further...
Poly-SiââxGex Film Growth for Ni Germanosilicided Metal Gate (2004)
Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further...
Oblique Angle Deposition of Germanium Film on Silicon Substrate (2004)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Fitzgerald, Eugene A.
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at...
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering (2004)
Kan, Eric Win Hong, Koh, B.H., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction....
Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts (2004)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Chi, D.Z.
Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex...
Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts (2004)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Chi, D.Z.
Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex...
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide (2003)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Chi, D.Z.
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects (2003)
Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., ...
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments (2003)
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments (2003)
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects (2003)
Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., ...
The median-times-to-failure (t₅₀âs) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to...
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide (2003)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Chi, D.Z.
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A remarkable...
Charge storage in nanocrystal systems: Role of defects? (2003)
Kan, Eric Win Hong, Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that...
Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., ...
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer...
Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., ...
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer...
Charge storage in nanocrystal systems: Role of defects? (2003)
Kan, Eric Win Hong, Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For...
Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, ...
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon...
Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks (2003)
Lei, Y., Teo, L.W., Yeong, K.S., See, Y.H., Chim, Wai Kin, Choi, Wee Kiong, ...
Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the...
Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry...
The interfacial reaction of Ni on (100) Si₁âxGex (x=0, 0.25) and (111) Ge (2003)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., ...
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid...
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are...
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees (2003)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried...
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees (2003)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried...
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiOâ interconnects trees were studied and simulated. Failure sites with âmelt patchâ or...
The interfacial reaction of Ni on (100) SiââxGex (x=0, 0.25) and (111) Ge (2003)
Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., ...
The interfacial reaction of Ni with Si, Siâ.ââ Geâ.ââ , and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for...
Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Siâ.â âGeâ.ââ...
Fabrication of Highly Ordered Nanoparticle Arrays Using Thin Porous Alumina Masks (2003)
Lei, Y., Teo, L.W., Yeong, K.S., See, Y.H., Chim, Wai Kin, Choi, Wee Kiong, ...
Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the...
Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, ...
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon...
Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals (2002)
Heng, C.L., Choi, Wee Kiong, Chim, Wai Kin, Teo, L.W., Ho, Vincent, Tjiu, W.W., ...
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm)...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization (2002)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., ...
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via...
Length Effects on the Reliability of Dual-Damascene Cu Interconnects (2002)
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., ...
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing...
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices (2002)
Teo, L.W., Heng, C.L., Ho, V., Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, ...
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal...
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices (2002)
Teo, L.W., Heng, C.L., Ho, V., Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, ...
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation...
Length Effects on the Reliability of Dual-Damascene Cu Interconnects (2002)
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., ...
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization (2002)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., ...
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via...
Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals (2002)
Heng, C.L., Choi, Wee Kiong, Chim, Wai Kin, Teo, L.W., Ho, Vincent, Tjiu, W.W., ...
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was...