Werner Bächtold

A C-Band Monolithic Silicon-Bipolar Low-Power Low-IF WLAN Receiver (2008)

Corrado Carta, Martin Schmatz, Rolf Vogt, Werner Bächtold

Abstract — This paper presents the design, implementation and measurements of a monolithic low-IF receiver compliant with the main 5 GHz WLAN standards. It consists of a low-noise preamplifier,...

One-Step Patterning of Asymmetric Gate Recess for InP HEMTs using Genetic Algorithms (2008)

Franck Robin, Andrea Orzati, Esteban Moreno, Michael Spühler, Otte Homan, Werner Bächtold

For the first time, a canonical genetic algorithm was used to optimize the resist profiles for T-gate fabrication. An e-beam lithography simulation tool was elaborated that calculates the...

A Two Stage, Monolithic Integrated 200 mW HEMT Amplifier for Wireless ATM (2007)

Thomas A. Bös, Urs Lott, Werner Bächtold

For wireless LAN applications a compact two stage HEMT amplifier is designed and on-wafer measured with on-chip matching and bias networks. At 17.2 GHz the amplifier delivers 23.1 dBm saturated...

Simulation and Evolutionary Optimization of Electron-Beam Lithography with Genetic and Simplex-Downhill Algorithms (2003)

Franck Robin, Andrea Orzati, Student Member, Esteban Moreno, Otte J. Homan, Werner Bächtold

Genetic and simplex-downhill (SD) algorithms were used for the optimization of the electron-beam lithography (EBL) step in the fabrication of microwave electronic circuits. The definition of...

Effects Of Epitaxial Lift Off On The Dc, Rf And Thermal Properties Of Mesfets On Various Host Materials (1998)

Thomas Morf Charlotte, Charlotte Biber, Werner Bächtold

In this paper we present an in depth investigation on the effects of epitaxial lift off (ELO) on GaAs MESFETs. DC and microwave characteristics as well as thermal effects are considered. Devices were...

Systematic Investigations On Mesfets And Passive Components Transplanted By Epitaxial Lift Off Onto Host Materials With Various Resistivities (1996)

Thomas Morf Charlotte, Charlotte Biber, Werner Bächtold

In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are...

accepted on the recommendation of (1968)

Christoph Stamm, Prof Dr, Peter Widmayer, Prof Dr, Werner Bächtold, Prof Dr, ...

I thank all the people who have helped me in realizing this thesis, and with whom it was a pleasure to work, including those not explicitly named here. First of all, I express my thanks to my advisor...