Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors (2008)
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, Jeff, ...
Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al0.8Ga0.2N heterostructure. In these experiments, we observe around zero time...
Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors (2008)
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, Jeff, ...
Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al0.8Ga0.2N heterostructure. In these experiments, we observe around zero time...
Resonant tunnelling and intersubband absorption in AlN - GaN superlattices (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Wu, Hong, Schaff, William J., Eastman, Lester F., ...
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the...
Resonant tunnelling and intersubband absorption in AlN - GaN superlattices (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Wu, Hong, Schaff, William J., Eastman, Lester F., ...
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the...
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, Jeff, ...
Ultrafast electron dynamics in the inversion layer of an AlGaN/GaN transistor is studied in pump–probe experiments with 50 fs mid-infrared pulses. Two-colour pump–probe measurements show an...
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, Jeff, ...
Ultrafast electron dynamics in the inversion layer of an AlGaN/GaN transistor is studied in pump–probe experiments with 50 fs mid-infrared pulses. Two-colour pump–probe measurements show an...
GaN/AlN-based quantum-well infrared photodetector for 1.55 µm (2008)
Hofstetter, Daniel, Schad, Sven-Silvius, Wu, Hong, Schaff, William J., Eastman, Lester F.
We report optical absorption and photocurrent measurements on a GaN/AlN-based superlattice. The optical absorption has a full width at half maximum of 120 meV and takes place at an energy of 660 meV...
GaN/AlN-based quantum-well infrared photodetector for 1.55 µm (2008)
Hofstetter, Daniel, Schad, Sven-Silvius, Wu, Hong, Schaff, William J., Eastman, Lester F.
We report optical absorption and photocurrent measurements on a GaN/AlN-based superlattice. The optical absorption has a full width at half maximum of 120 meV and takes place at an energy of 660 meV...
Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors (2008)
Hofstetter, Daniel, Diehl, Laurent, Faist, Jérôme, Schaff, William J., Hwang, Jeff, Eastman, Lester F., ...
Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first...
Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors (2008)
Hofstetter, Daniel, Diehl, Laurent, Faist, Jérôme, Schaff, William J., Hwang, Jeff, Eastman, Lester F., ...
Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first...
Intersubband photoconductivity at 1.6 µm using a strain-compensated AlN/GaN superlattice (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Lu, H., Chen, X., Schaff, William J., ...
We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to...
Intersubband photoconductivity at 1.6 µm using a strain-compensated AlN/GaN superlattice (2008)
Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, Lu, H., Chen, X., Schaff, William J., ...
We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to...
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, J., ...
We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al0.8Ga0.2N heterostructure. Femtosecond...
Wang, Z., Reimann, K., Woerner, M., Elsaesser, T., Hofstetter, Daniel, Hwang, J., ...
We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al0.8Ga0.2N heterostructure. Femtosecond...
Hofstetter, Daniel, Despont, Laurent, Garnier, Michael Bernard Gunnar, Baumann, Esther, Giorgetta, Fabrizio R., Aebi, Philipp, ...
The authors investigated a 1 µm thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray...
Hofstetter, Daniel, Despont, Laurent, Garnier, Michael Bernard Gunnar, Baumann, Esther, Giorgetta, Fabrizio R., Aebi, Philipp, ...
The authors investigated a 1 µm thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray...
Photoluminescence of Energetic Particle-Irradiated InxGa1-xN Alloys (2005)
Li, S.X., Jones, R.E., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III, J.W., ...
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys (2005)
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager III, J. W., Wu, J., ...
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption...
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys (2005)
Li, S.X., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III, J.W., Wu, J., ...
Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN (2005)
Li, S.X., Yu, K.M., Jones, R.E., Wu, J., Walukiewicz, W., Ager III, J.W., ...
Fermi level stabilization energy in group III-nitrides (2005)
Li, S.X., Yu, K.M., Wu, J., Jones, R.E., Walukiewicz, W., Ager III, J.W., ...
On the crystalline structure, stoichiometry and band gap of InN thin films (2004)
Yu, K.M., Liliental-Weber, Z., Walukiewicz, W., Li, S.X., Jones, R.E., Shan, W., ...
Semiconductor Laser Joint Study Program with Rome Laboratory (2002)
Schaff, William J., O'Keefe, Sean S., Eastman, Lester F.
A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell...
Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials. (1998)
Schaff, William J., Offsey, S. D., Eastman, Lester F.
Strained layer GaInAs/GaAs heterostructures for improved high frequency high performance as a result of strained modified valence band structure continue to be investigated. The first demonstration...
Violet/Ultraviolet Semiconductor Injection Lasers Using GaN-Based Materials (1998)
The GaN material system was examined for the growth of semiconductor injection lasers for high density optical interconnect applications. The effort focused on the growth, via molecular beam epitaxy,...
Vertical Cavity Laser Joint Study Program with Rome Laboratory. (1997)
This effort investigated the development of short wavelength VCSEL (vertical cavity surface emitting laser) material for potential application in optical interconnects for radar signal processing...
Vertical Cavity Laser Joint Study Program with Rome Laboratory. (1997)
Schaff, William J., O'Keefe, Sean S.
A program to study vertical-cavity surface emitting lasers (VCSELs) for high speed vertical optical interconnects (vol) has been conducted jointly between Rome Laboratory and Cornell University....