WK Fong

Doping of GaN by Mg diffusion (2002)

To, T, Djurisic, AB, Xie, MH, Fong, WK, Surya, C

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Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs (1996)

Surya, C, Wong, W, Fong, WK, Chan, CH, Lai, PT

Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from from 10 to 40 minutes. The noise power...