X. Wallart

Imaging Electron Wave Functions Inside Open Quantum Rings (2007)

Martins, F., Hackens, B., Pala, M. G., Ouisse, T., Sellier, H., Wallart, X., ...

Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|\Psi|^{2}(x,y)$ in embedded mesoscopic quantum rings...

Imaging and controlling electron transport inside a quantum ring (2006)

Hackens, B., Martins, F., Ouisse, T., Sellier, H., Bollaert, S., Wallart, X., ...

Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical...

Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate (2004)

Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., ...

This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic...

Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures (2004)

Galloo, J.S., Roelens, Y., Bollaert, S., Pichonat, E., Wallart, X., Cappy, A., ...

We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic...

An experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus (2003)

Wallart, X., Priester, C.

HEMT's Design for Applications beyond 100GHz (2002)

Bollaert, S., Parenty, T., Wallart, X., Happy, H., Dambrine, G., Cappy, A.

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A combined RHEED and photoemission comparison of the GaP and InP (001) (2x4) surface reconstructions (2002)

Wallart, X.

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ? (2002)

Wallart, X., Priester, C., Deresmes, D., Gehin, T., Mollot, F.

Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range (2001)

Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate (2001)

Bollaert, S., Wallart, X., Lepilliet, S., Cappy, A., Jalaguier, E., Pocas, S., ...

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length....

Bonding in skutterudites : combined experimental and theoretical characterization of CoSb3 (2001)

Lefebvre-Devos, I., Lassalle, M., Wallart, X., Olivier-Fourcade, J., Monconduit, L., Jumas, J.C.

Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides (2001)

Wallart, X., Deresmes, D., Mollot, F.

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy (2001)

Wallart, X., Deresmes, D., Mollot, F.

A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs (1998)

Hoel, V., Bollaert, S., Wallart, X., Grimbert, B., Lepilliet, S., Cappy, A.

A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small...