Evidence for $\pi K$-atoms with DIRAC (2009)
Adeva, B., Afanasyev, L., Allkofer, Y., Amsler, C., Anania, A., Benelli, A., ...
We present evidence for the first observation of electromagnetically bound $\pi^\pm K^\mp$-pairs ($\pi K$-atoms) with the DIRAC experiment at the CERN-PS. The $\pi K$-atoms are produced by the 24...
Design and performance of the silicon sensors for the CMS barrel pixel detector (2008)
Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., ...
The CMS experiment at the (LHC) includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with...
Design and performance of the silicon sensors for the CMS barrel pixel detector (2007)
Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., Cucciarelli, S., ...
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with...
Simulation of Heavily Irradiated Silicon Pixel Detectors (2006)
Swartz, M., Chiochia, V., Allkofer, Y., Amsler, C., Bortoletto, D., Cremaldi, L., ...
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two...
Extraction of electric field in heavily irradiated silicon pixel sensors (2006)
Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., ...
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of...
Extraction of electric field in heavily irradiated silicon pixel sensors (2006)
Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., ...
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of...
A double junction model of irradiated silicon pixel sensors for LHC (2006)
Chiochia, V., Swartz, M., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucclarelli, S., ...
In this paper, we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage...
Swartz, M., Chiochia, V., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., ...
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two...
A double junction model of irradiated silicon pixel sensors for LHC (2006)
Chiochia, V., Swartz, M., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucclarelli, S., ...
In this paper, we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage...
Extraction of electric field in heavily irradiated silicon pixel sensors (2006)
Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., ...
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of...
Swartz, M., Chiochia, V., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., ...
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two...
A double junction model of irradiated silicon pixel sensors for LHC (2005)
Chiochia, V., Swartz, M., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., ...
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage...
Extraction of electric field in heavily irradiated silicon pixel sensors (2004)
Dorokhov, A., Allkofer, Y., Amsler, C., Bortoletto, D., Chiochia, V., Cremaldi, L., ...
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of...