De Jaeger, J.C., Delage, S. L., Dambrine, G., Di Forte Poisson, M.A, Hoel, V., Lepilliet, S., ...
This study regards the low noise properties of X-bandGaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown onSiC or Si substrates. The HEMTs present very low...
Minko, A., Hoel, V., Dambrine, G., Gaquiere, C., Dejaeger, J-C, Cordier, Y., ...
High performances was achieved on AlGaN/GaN HEMTs based on Si(111). Devices with 0.17-µm and 0.3-µm gate lengths are fabricated on two different layer growth at TIGER laboratory. RF noise and power...
Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement (2004)
Jacquet, J-C, Aubry, R., Gérard, H., Delos, E., Rolland, N., Cordier, Y., ...
ABSTRACT — GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high...
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs (2003)
Cordier, Y., Lorenzini, P., Chauveau, J.M., FerrÉ, D., Androussi, Y., Di Persio, J., ...
Ardouin, M., Bonte, B., Zaknoune, M., Théron, D., Cordier, Y., Bollaert, S., ...
This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range....
Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...
The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...
Electroluminescence of metamorphic In x Al 1-x As / In x Ga 1-x As HEMTs ON GaAs substrate (2000)
Cavassilas, N., Aniel, F., Nojeh, A., Adde, R., Zaknoune, M., Bollaert, S., ...
We present the first impact ionization investigation by electroluminescence of InxAl1-xAs /InxGa1-xAs metamorphic High Electron Mobility transistors on GaAs. Two Indium content are investigated....
Boudrissa, M., Delos, E., Cordier, Y., Theron, D., De Jaeger, J.C.
This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metamorphic growth of Al0.67In0.33As/Ga0.66In0.34As HEMT structure on a GaAs substrate. The devices,...
Power performance capability of metamorphic HEMT on GaAs substrate (1998)
Zaknoune, M., Cordier, Y., Bollaert, S., Theron, D., Crosnier, Y.
An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over...
0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate (1998)
Bollaert, S., Cordier, Y., Happy, H., Zaknoune, M., Lepilliet, S., Cappy, A.
We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode...
Potier, N, Van Dorsselaer, A, Cordier, Y, Roch, O, Bischoff, R
We report here on the analysis of synthetic oligonucleotides by electrospray ionization mass spectrometry (ESI-MS). After intensive removal of salt ions (especially sodium cations), negative ion mass...
Potier, N, Van Dorsselaer, A, Cordier, Y, Roch, O, Bischoff, R
We report here on the analysis of synthetic oligonucleotides by electrospray ionization mass spectrometry (ESI-MS). After intensive removal of salt ions (especially sodium cations), negative ion mass...