Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...
Study of Stress Evolution of Germanium Nanocrystals Embedded in Silicon Oxide Matrix (2007)
Chew, Han Guan, Choi, Wee Kiong, Chim, Wai Kin, Foo, Y.L., Fitzgerald, Eugene A.
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO₂-Ge in N₂ and/or forming gas (90% N₂ + 10% H₂) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It...
Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron...
Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., ...
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiOâ) system have been studied based on the Ge content of co-sputtered Ge-SiOâ films using transmission...
Surface mass transport and island nucleation during growth of Ge on laser textured Si(001) (2002)
Schwarz-Selinger,T., Foo,Y. L., Cahill,D. G., Greene,J. E.
Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by...
Surface mass transport and island nucleation during growth of Ge on laser textured Si(001) (2002)
Schwarz-Selinger, T., Foo, Y. L., Cahill, D. G., Greene, J. E.
Substrates with controlled surface morphologies are used to quantify the kinetics of surface mass transport during Stranski-Krastanov growth of epitaxial nanostructures. Morphologies are modified by...