Y. Narukawa

Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy (2007)

Kawakami, Y, Nishizuka, K, Yamada, D, Kaneta, A, Funato, M, Narukawa, Y, ...

Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets (2007)

Ueda, M, Kondou, T, Hayashi, K, Funato, M, Kawakami, Y, Narukawa, Y, ...

Efficient green emission from (11(2)over-bar2) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy (2007)

Kawakami, Y., Nishizuka, K., Yamada, D., Kaneta, A., Funato, M., Narukawa, Y., ...

Additive color mixture of emission from InGaN/GaN quantum wells on structure-controlled GaN microfacets (2007)

Ueda, M., Kondou, T., Hayashi, K., Funato, M., Kawakami, Y., Narukawa, Y., ...

Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures (2007)

Ueda, M, Hayashi, K, Kondou, T, Funato, M, Kawakami, Y, Narukawa, Y, ...

Epitaxial growth and optical properties of semipolar (11(2)over-bar2) GaN and InGaN/GaN quantum wells on GaN bulk substrates (2006)

Ueda, M, Kojima, K, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, T

Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors (2006)

Funato, M, Kotani, T, Kondou, T, Kawakami, Y, Narukawa, Y, Mukai, T

Observation of optical instabilities in the photoluminescence of InGaN single quantum well (2006)

Micheletto, R, Abiko, M, Kaneta, A, Kawakami, Y, Narukawa, Y, Mukai, T

Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors (2006)

Funato, M, Kotani, T, Kondou, T, Kawakami, Y, Narukawa, Y, Mukai, T

Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates (2006)

Funato, M, Ueda, M, Kawakami, Y, Narukawa, Y, Kosugi, T, Takahashi, M, ...

Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers (2006)

Kojima, K, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, T

Epitaxial growth and optical properties of semipolar (11(2)over-bar2) GaN and InGaN/GaN quantum wells on GaN bulk substrates (2006)

Ueda, M, Kojima, K, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, T

Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells (2006)

Sasaki, A, Shibakawa, S, Kawakami, Y, Nishizuka, K, Narukawa, Y, Mukai, T

Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets (2005)

Nishizuka, K, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, T

Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy (2005)

Okamoto, K, Niki, I, Scherer, A, Narukawa, Y, Mukai, T, Kawakami, Y

Efficient rainbow color luminescence from InxGa1-xN single quantum wells fabricated on {11(2)over-bar2} microfacets (2005)

Nishizuka, K, Funato, M, Kawakami, Y, Narukawa, Y, Mukai, T

Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy (2005)

Okamoto, K, Niki, I, Scherer, A, Narukawa, Y, Mukai, T, Kawakami, Y

Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique (2004)

Nishizuka, K, Funato, M, Kawakami, Y, Fujita, S, Narukawa, Y, Mukai, T

Optically pumped lasing and gain formation properties in blue InxGa1-xN MQWs (2004)

Kojima, K, Shikanai, A, Omae, K, Funato, M, Kawakami, Y, Narukawa, Y, ...

Efficient radiative recombination from < 11(2)over-bar-2 >-oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique (2004)

Nishizuka, K, Funato, M, Kawakami, Y, Fujita, S, Narukawa, Y, Mukai, T

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy (2003)

Kaneta, A, Mutoh, T, Kawakami, Y, Fujita, S, Marutsuki, G, Narukawa, Y, ...

Effects of internal electrical field on transient absorption in InxGa1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy (2003)

Omae, K, Kawakami, Y, Fujita, S, Narukawa, Y, Mukai, T

Recombination dynamics in low-dimensional nitride semiconductors (2003)

Kawakami, Y, Kaneta, A, Omae, K, Shikanai, A, Okamoto, K, Marutsuki, G, ...

The hot carrier dynamics in InGaN multi-quantum well structure (2003)

Shikanai, A, Kojima, K, Omae, K, Kawakami, Y, Narukawa, Y, Mukai, T, ...

Effects of internal electrical field on transient absorption in InxGa1-xN thin layers and quantum wells with different thickness by pump and probe spectroscopy (2003)

Omae, K, Kawakami, Y, Fujita, S, Narukawa, Y, Mukai, T

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy (2003)

Kaneta, A, Mutoh, T, Kawakami, Y, Fujita, S, Marutsuki, G, Narukawa, Y, ...

Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy (2002)

Kaneta, A, Okamoto, K, Kawakami, Y, Fujita, S, Marutsuki, G, Narukawa, Y, ...

Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer (2002)

Omae, K, Kawakami, Y, Fujita, S, Yamada, M, Narukawa, Y, Mukai, T

Electroluminescence mapping of InGaN-based LEDs by SNOM (2002)

Marutsuki, G, Narukawa, Y, Mitani, T, Mukai, T, Shinomiya, G, Kaneta, A, ...

Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer (2002)

Omae, K, Kawakami, Y, Fujita, S, Yamada, M, Narukawa, Y, Mukai, T

Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy (2002)

Kaneta, A, Okamoto, K, Kawakami, Y, Fujita, S, Marutsuki, G, Narukawa, Y, ...

Nondegenerated pump and probe spectroscopy in InGaN-based semiconductors (2002)

Omae, K, Kawakami, Y, Narukawa, Y, Watanabe, Y, Mukai, T, Fujita, S

Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order (2001)

Sasaki, A, Tsuchida, K, Narukawa, Y, Kawakami, Y, Fujita, S, Hsu, Y, ...

Radiative and nonradiative recombination processes in GaN-based semiconductors (2001)

Kawakami, Y, Omae, K, Kaneta, A, Okamoto, K, Izumi, T, Saijou, S, ...

Pump and probe spectroscopy of InGaN multi quantum well based laser diodes (2001)

Kawakami, Y, Narukawa, Y, Omae, K, Nakamura, S, Fujita, S

Ordering dependence of carrier lifetimes and ordered states of Ga0.52In0.48P/GaAs with degree of order (2001)

Sasaki, A, Tsuchida, K, Narukawa, Y, Kawakami, Y, Fujita, S, Hsu, Y, ...

In inhomogeneity and emission characteristics of InGaN (2001)

Kawakami, Y, Omae, K, Kaneta, A, Okamoto, K, Narukawa, Y, Mukai, T, ...

Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes (2000)

Kawakami, Y, Narukawa, Y, Omae, K, Fujita, S, Nakamura, S

Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs(n11)A (n (2000)

Feng, JM, Asai, K, Narukawa, Y, Kawakami, Y, Fujita, S, Ohachi, T

Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaP/InP quantum dot structures (2000)

Mori, J, Asahi, H, Fudeta, M, Noh, JH, Watanabe, D, Matsuda, S, ...

Dynamics of optical gain in InxGa1-xN multi-quantum-well-based laser diodes (2000)

Kawakami, Y, Narukawa, Y, Omae, K, Fujita, S, Nakamura, S

Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution (2000)

Izumi, T, Narukawa, Y, Okamoto, K, Kawakami, Y, Fujita, S, Nakamura, S

Dimensionality of excitons in InGaN-based light emitting devices (2000)

Kawakami, Y, Narukawa, Y, Omae, K, Fujita, S, Nakamura, S