Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) (2009)
Shen, T., Gu, J. J., Xu, M., Wu, Y. Q., Bolen, M. L., Capano, M. A., ...
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting...
M, Xu, Wu, Y Q, Koybasi, O, Shen, T, Ye, P. D.
GaAs inversion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectrics are fabricated on (111)A and (100) surfaces. With the same...
Wu, Y Q, Xu, M, Ye, P. D., Cheng, Z, Li, J, Park, J, ...
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T, Wu, Y Q, Rokhinson, Leonid P, Engel, L W, Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nanoscale square antidot arrays have been fabricated on these...
Multiple charge density wave transitions in Gd$_2$Te$_5$ (2008)
Shin, K. Y., Ru, N., Condron, C. L., Wu, Y. Q., Kramer, M. J., Toney, M. F., ...
Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd$_2$Te$_5$ at $T_{c1}$ = 410(3)...
Magneto-conductance Oscillations in Graphene Antidot Arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. R., Engel, L. W., Ye, P. D.
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these...
High-performance inversion-type enhancementmode (E-mode) n-channel In0.65Ga0.35As MOSFETs with atomic-layer-deposited Al2O3 as gate dielectric are demonstrated. A 0.4-mu m gate-length MOSFET with an...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y Q, Ye, P. D., Capano, Michael A, Xuan, Yi, Sui, Y, Qi, Minghao, ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics (2008)
Xuan, Yi, Wu, Y Q, Shen, T, Qi, Minghao, Capano, Michael A, Cooper, James A, ...
Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 10(8) cm/s and a room-temperature mobility of >15 000 cm(2)/V s. How to grow gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Magnetoconductance oscillations in graphene antidot arrays (2008)
Shen, T., Wu, Y. Q., Capano, M. A., Rokhinson, L. P., Engel, L. W., Ye, P. D.
Charge density wave formation in $R_{2}$Te$_{5}$ ($R$=Nd, Sm and Gd) (2007)
Shin, K. Y., Laverock, J., Wu, Y. Q., Condron, C. L., Toney, M. F., Dugdale, S. B., ...
The rare earth ($R$) tellurides $R_2$Te$_5$ have a crystal structure intermediate between that of $R$Te$_2$ and $R$Te$_3$, consisting of alternating single and double Te planes sandwiched between...
Y. Q. Wu, D. H. Ping, B. S. Murty, H. Kanekiyo, S. Hirosawa, K. Hono
The nanocomposite magnet, which is composed of exchange coupled nanocrystalline soft (Fe 3B, α-Fe) and hard (Nd 2Fe 14B) magnetic phases, was first reported by Coehoorn et al. [1], and the...
Xuan, Y, Wu, Y Q, Lin, H C, Shen, T, Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound...
Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding (2007)
Wang, Y., Zou, J., Huang, H., Zhou, L., Wang, B. L., Wu, Y. Q.
The phase transformations of Si under nanogrinding have been studied by transmission electron microscopy and Raman spectroscopy. Nanocrystalline high-pressure phases (Si-III/Si-XII) were found in the...
Yang, T, Xuan, Y, Zemlyanov, Dmitry, Shen, T, Wu, Y Q, Woodall, Jerry M, ...
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3...
Y. Q. Wu, Yinghua Huang, David R. Porter, C. G. Tauer, Lindsey Hollaway
Greenbug, Schizaphis graminum (Rondani), represents the most important pest insect of sorghum, Sorghum bicolor (L.) Moench, in the Great Plains of the United States. Biotype E is the most widespread...
Structural phase transition and ferromagnetism in monodisperse 3 nm FePt particles (2007)
Rong, Chuan-bing, Poudyal, Narayan, Chaubey, Girija S., Nandwana, Vikas, Skomski, Ralph, Wu, Y. Q., ...
FePt nanoparticles with a size of 3 nm and thermally stable room-temperature ferromagnetism are investigated. The monodisperse nanoparticles were prepared by chemical synthesis and a salt-matrix...
Wu, Y Q, Xuan, Y, Shen, T, Ye, P. D., Cheng, Z, Lochtefeld, A
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75-40 mu m gate length fabricated on a semi-insulating substrate with...
Wu, Y. Q., Xuan, Y., Ye, P. D.
As the Moore's Law push device scaling to a fundamental physical limit, alternatives have been attempted to explore tha "Plenty of Room at the Bottom." Chip giant Intel and IBM announced the high-k...
High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric (2007)
Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., Ye, P. D.
The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry...
Wu, Y Q, Shen, T, Ye, P. D., Wilk, G D
The authors report on an Al2O3 gate oxide deposited on n-type GaN by atomic layer deposition technique. The high-frequency C-V characteristic shows deep-depletion behavior at room temperature due to...
Wu, Y Q, Lin, H C, Ye, P. D., Wilk, G D
Current-voltage characteristics have been measured for an ultrathin atomic-layer-deposited Al2O3 on GaAs as a function of film thickness, ambient temperature, and electric field. Current transport...
Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding (2007)
Wang, Y., Zou, J., Huang, H., Zhou, L., Wang, B.L., Wu, Y.Q.
The phase transformations of Si under nanogrinding have been studied by transmission electron microscopy and Raman spectroscopy. Nanocrystalline high-pressure phases (Si-III/Si-XII) were found in the...
The stability of faceted SiGe quantum dots capped with a thin Si layer (2007)
Wu, Y.Q., Zou, J., Li, F.H., Cui, J., Lin, J.H., Wu, R., ...
Detailed surface morphologies and facets of partially capped Ge/Si(001) quantum dots were investigated by atomic force microscopy for samples capped with different thicknesses and subsequently...
Shape preservation of self-assembled SiGe quantum rings during Si capping (2007)
Li, F.H., Tao, Z.S., Qin, J., Wu, Y.Q., Zou, J., Lu, F., ...
Faceted SiGe quantum dots and their stabilities (2007)
Wu, Y. Q., Zou, J., Li, F. H., Lin, J. H., Wu, R., Jiang, Z. M.
Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding (2007)
Wang, Y., Zou, J., Huang, H., Zhou, L., Wang, B. L., Wu, Y. Q.
The phase transformations of Si under nanogrinding have been studied by transmission electron microscopy and Raman spectroscopy. Nanocrystalline high-pressure phases (Si-III/Si-XII) were found in the...
The stability of faceted SiGe quantum dots capped with a thin Si layer (2007)
Wu, Y.Q., Zou, J., Li, F.H., Cui, J., Lin, J.H., Wu, R., ...
Detailed surface morphologies and facets of partially capped Ge/Si(001) quantum dots were investigated by atomic force microscopy for samples capped with different thicknesses and subsequently...
Shape preservation of self-assembled SiGe quantum rings during Si capping (2007)
Li, F.H., Tao, Z.S., Qin, J., Wu, Y.Q., Zou, J., Lu, F., ...
Self-assembled SiGe quantum rings (QRs) on Si(001) are capped with Si layers at temperatures varying from 200 to 550 ◦C; their shape changes after Si capping are investigated by atomic force...
Faceted SiGe quantum dots and their stabilities (2007)
Wu, Y. Q., Zou, J., Li, F. H., Lin, J. H., Wu, R., Jiang, Z. M.
Structure of the forkhead domain of FOXP2 bound to DNA (2006)
Stroud, J. C., Wu, Y. Q., Bates, D. L., Han, A. D., Nowick, Katja, Pääbo, Svante, ...
The stability of faceted SiGe quantum dotes capped with a Si thin layer (2006)
Wu, Y. Q., Zou, J., LI, F. H., Lin, J. H., Wu, R. W., Jiang, Z. M.
Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates (2006)
Chen, S., Zhu, Y. Y., Xu, R., Wu, Y. .Q, Yang, X. J., Fan, Y. L.., ...
Crystalline Er2O3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as...
The stability of faceted SiGe quantum dotes capped with a Si thin layer (2006)
Wu, Y. Q., Zou, J., LI, F. H., Lin, J. H., Wu, R. W., Jiang, Z. M.
Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates (2006)
Chen, S., Zhu, Y. Y., Xu, R., Wu, Y. .Q, Yang, X. J., Fan, Y. L.., ...
Crystalline Er2O3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as...
Quian, B., Sirikatitham, A., Panichayupakaranant, P., Zhang, R.P., Guo, Y.Q., Wu, Y.Q.
Se desarrolló un método de cromatografía líquida de alto rendimiento cuantitativa y de separación utilizando una columna RP-18 eluida isocráticamente con metanol y agua (73:27, v/v) para...
Quian, B., Sirikatitham, A., Panichayupakaranant, P., Zhang, R.P., Guo, Y.Q., Wu, Y.Q.
Se desarrolló un método de cromatografía líquida de alto rendimiento cuantitativa y de separación utilizando una columna RP-18 eluida isocráticamente con metanol y agua (73:27, v/v) para...
Superconductivity in MgB_2 doped with Ti and C (2004)
Wilke, R. H. T., Bud'ko, S. L., Canfield, P. C., Kramer, M. J., Wu, Y. Q., Finnemore, D. K., ...
Measurements of the superconducting upper critical field, H_{c2}, and critical current density, J_c, have been carried out for MgB_2 doped with Ti and/or C in order to explore the problems...
Avila, M. A., Wu, Y. Q., Condron, C. L., Bud'ko, S. L., Kramer, M., Miller, G. J., ...
We address the nature of the ligandal disorder leading to local redistributions of Kondo temperatures, manifested as annealing-induced changes in the transport behavior of the heavy fermion system...
Mungre, S, Enderle, K, Turk, B, Porrás, A, Wu, Y Q, Mumby, M C, ...
Three independent point mutations within residues 97 to 103 of the simian virus 40-small-t antigen (small-t) greatly reduced the ability of purified small-t to inhibit protein phosphatase 2A in...
Mungre, S, Enderle, K, Turk, B, Porrás, A, Wu, Y Q, Mumby, M C, ...
Three independent point mutations within residues 97 to 103 of the simian virus 40-small-t antigen (small-t) greatly reduced the ability of purified small-t to inhibit protein phosphatase 2A in...
An epidemiological study on occupational acute pyrethroid poisoning in cotton farmers.
Chen, S Y, Zhang, Z W, He, F S, Yao, P P, Wu, Y Q, Sun, J X, ...
A cross sectional survey on the prevalence of acute pyrethroid poisoning in cotton farmers was conducted in 1987 and 1988. A total of 3113 pyrethroid spraymen (2230 men (71.6%) and 883 women (28.4%]...
Levels of exposure and biological monitoring of pyrethroids in spraymen.
Zhang, Z W, Sun, J X, Chen, S Y, Wu, Y Q, He, F S
To assess the exposure response relation of pyrethroids in spraymen, 50 adult male cotton growers were selected and divided into three groups, one group to spray pyrethroids for one day, two groups...