Y. Xuan, I. D. Cluckie, Y. Wang
Advances in mesoscale numerical weather predication make it possible to provide rainfall forecasts along with many other data fields at increasingly higher spatial resolutions. It is currently...
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment (2008)
Nguyen, N V, Kirillov, Oleg A, Jiang, W, Wang, Wenyong, Suehle, John S, Ye, P. D., ...
The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effect...
Kim, S, Xuan, Y, Ye, P. D., Mohammadi, Saeed, Lee, S W
Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008)
Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., ...
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate...
High-performance inversion-type enhancement-mode n-channel In0.65Ga0.35As metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al2O3 as gate dielectric are...
Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...
Xuan, Y, Wu, Y Q, Lin, H C, Shen, T, Ye, P. D.
High-performance inversion-type enhancement-mode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III-V compound...
Yang, T, Xuan, Y, Zemlyanov, Dmitry, Shen, T, Wu, Y Q, Woodall, Jerry M, ...
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3...
Lin, H C, Kim, S K, Chang, D, Xuan, Y, Mohammadi, Saeed, Ye, P. D., ...
Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are...
Atomic layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. The physics and chemistry of a III-V compound semiconductor...
Wu, Y Q, Xuan, Y, Shen, T, Ye, P. D., Cheng, Z, Lochtefeld, A
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75-40 mu m gate length fabricated on a semi-insulating substrate with...
Wu, Y. Q., Xuan, Y., Ye, P. D.
As the Moore's Law push device scaling to a fundamental physical limit, alternatives have been attempted to explore tha "Plenty of Room at the Bottom." Chip giant Intel and IBM announced the high-k...
High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric (2007)
Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., Ye, P. D.
The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry...
Lin, H. C., Ye, P. D., Xuan, Y., Lu, G., Facchetti, A., Marks, T. J.
High-performance GaAs metal-insulator-semiconductor field-effect-transistors
Xuan, Y., Ye, P. D., Lin, H. C., Wilk, G. D.
Atomic layer deposition
Xuan, Y., Lin, H. C., Ye, P. D., Wilk, G. D.
Atomic layer deposition
Morphologies in solvent-annealed thin films of symmetric diblock copolymer (2006)
Peng, J., Kim, D. H., Knoll, Wolfgang, Xuan, Y., Li, B. Y., Han, Y. C.
Cluckie, I. D., Xuan, Y., Wang, Y.
Advances in meso-scale numerical weather predication make it possible to provide rainfall forecasts along with many other data fields at increasingly higher spatial resolutions. It is currently...
Cluckie, I. D., Xuan, Y., Wang, Y.
Advances in meso-scale numerical weather predication make it possible to provide rainfall forecasts along with many other data fields at increasingly higher spatial resolutions. It is currently...
I. D. Cluckie, Y. Xuan, Y. Wang
Advances in meso-scale numerical weather predication make it possible to provide rainfall forecasts along with many other data fields at increasingly higher spatial resolutions. It is currently...
Wu, X. S., Lu, L., Zhang, D. L., Xuan, Y., Tao, H. J.
The occurrence and development of phase inhomogeneity in {\rm Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$} single crystals have been investigated by measuring their superconducting transition patterns using a...
Xuan, Y., Tao, H. J., Li, Z. Z., Lin, C. T., Ni, Y. M., Zhao, B. R., ...
Temperature and doping dependent tunneling spectroscopy on $Bi_2Sr_2CaCu_2O_{8+\delta}$ single crystals has been investigated by using break-junction technique. The results provide direct evidence...