Yoichi Kawakami

Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing (2008)

Micheletto, Ruggero, Hamamoto, Katsumi, Fujii, Takashi, Kawakami, Yoichi

Surface plasmon resonance sensors exploit the high sensitivity to local perturbations of plasma waves in a thin metal layer. These devices have a wide range of applications as biomedical,...

Dual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs (2008)

Park, Jongwoon, Suganuma, Naotoshi, Kawakami, Yoichi

n general, a guest dopant is doped into a single host matrix for white-light emission with two complementary colors. In this work, however, we have fabricated a white organic light-emitting diode...

Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy (2008)

Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi

AlN layers were grown directly on sapphire (0001) substrates using three different growth sequences based on metal-organic vapor phase epitaxy with an emphasis on initial nucleation processes. These...

Tenfold improved sensitivity using high refractive-index substrates for surface plasmon sensing (2008)

Micheletto, Ruggero, Hamamoto, Katsumi, Fujii, Takashi, Kawakami, Yoichi

Dual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs (2008)

Park, Jongwoon, Suganuma, Naotoshi, Kawakami, Yoichi

Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy (2008)

Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi

A polarization-modulation method for the near-field mapping of laterally grown InGaN samples (2008)

Micheletto, Ruggero, Yamada, Daisuke, Allegrini, Maria, Kawakami, Yoichi

Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting (2008)

Funato, Mitsuru, Kondou, Takeshi, Hayashi, Keita, Nishiura, Shotaro, Ueda, Masaya, Kawakami, Yoichi, ...

Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source (2007)

Funato, Mitsuru, Ujita, Shinji, Kawakami, Yoichi

Numerical analysis of multilayer organic light-emitting diodes (2007)

Park, Jongwoon, Kawakami, Yoichi, Park, Seoung-Hwan

Surface plasmon enhanced bright light emission from InGaN/GaN (2007)

Okamoto, Koichi, Niki, Isamu, Shvartser, Alexander, Maltezos, George, Narukawa, Yukio, Mukai, Takashi, ...

Photoluminescence and optical reflectance investigation of semipolar and nonpolar GaN (2007)

Kojima, Kazunobu, Ueda, Masaya, Funato, Mitsuru, Kawakami, Yoichi

Artefacts in polarization modulation scanning near-field optical microscopes (2007)

Micheletto, R., Allegrini, M., Kawakami, Yoichi

Acoustical nanometre-scale vibrations of live cells detected by a near-field optical setup (2007)

Piga, Rosaria, Micheletto, Ruggero, Kawakami, Yoichi

Optical nanometer-scale sensing of mechanical vibrations with a planar glass at critical angle (2007)

Micheletto, Ruggero, Kawakami, Yoichi, Hamamoto, Katsumi

Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN (2005)

Okamoto, Koichi, Scherer, Axel, Kawakami, Yoichi

Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in...

Confocal microphotoluminescence of InGaN-based light-emitting diodes (2005)

Okamoto, Koichi, Kaneta, Akio, Kawakami, Yoichi, Fujita, Shigeo, Choi, Jungkwon, Terazima, Masahide, ...

Spatially resolved photoluminescence (PL) of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber light (600 nm) was measured by...

Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy (2005)

Okamoto, Koichi, Niki, Isamu, Scherer, Axel, Narukawa, Yukio, Mukai, Takashi, Kawakami, Yoichi

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We...