Scientific Commons: Yoshishige Tsuchiya

This paper presents the In-Plane Resonant NEM (IP R-NEM) sensor based on the mass-detection principle. The proposed sensor features a mass-detection limit of sub atto gram and the sensitivity of the...

Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection (2009)

Arab Hassani, Faezeh, Cobianu, Cornel, Armini, Silvia, Petrescu, Violeta, Merken, Patrick, Tsamados, Dimitrios, ...

This paper presents the In-Plane Resonant NEM (IP R-NEM) sensor based on the mass-detection principle. The proposed sensor features a mass-detection limit of sub atto gram and the sensitivity of the...

Hybrid Circuit Analysis of a Suspended Gate Silicon Nanodot Memory (SGSNM) cell (2009)

Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices (2009)

Mizuta, Hiroshi, Ramirez, M. A. G, Hassani, F. A, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Nagami, T, ...

Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures (2009)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications (Invited Talk) (2009)

Mizuta, Hiroshi, Ramirez, M. A. G, Tsuchiya, Yoshishige, Nagami, T, Uchida, K, Oda, S

NEM-MOS Co-integration for Fast & Nonvolatile Memory Applications (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K, Oda, S

Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, ...

Study of single-electron transport via suspended double silicon quantum dots (2009)

Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S, ...

Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide (2009)

Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

Electron transport through silicon serial triple quantum dots (2009)

Yamahata, G, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Oda, S

Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate (2009)

Li, C, Usami, K, Yamahata, G, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S

Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method (2009)

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N, Oda, S

Multi-scale Simulation of Hybrid Silicon Nanoelectromechanical (NEM) Information Systems (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Sawai, S, Oda, S, ...

Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk) (2008)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk) (2008)

Mizuta, Hiroshi, Nagami, T, Ogi, Jun, Pruvost, B, Ramirez, M.A.G, Yoshimura, Hideo, ...

Suspended Gate Silicon Nanodots memory (2008)

Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige, Mizuta, Hiroshi

This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing...

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots (2008)

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Detection of Single-Charge Polarisation in Silicon Double Quantum Dots by Using Serially-Connected Multiple Single-Electron Transistors (2008)

Kawata, Y, Oda, S, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Suspended gate silicon nanodot memory (2008)

Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk) (2008)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

Phosphorous-doping in silicon nanocrystals (2008)

Inaba, N, Nakamine, Y, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Pereira, R, ...

Silicon radio frequency single-electron transistors operating at above 4.2 K (2008)

Manoharan, M, Tsuchiya, Yoshishige, Oda, S, Mizuta, Hiroshi

Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6 (2008)

Akhtar, S, Tanaka, A, Usami, K, Tsuchiya, Yoshishige, Oda, S

Size-Dependent Structural Characterization of Silicon Nanowires (2008)

Akhtar, S, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S

Switching properties of electromechanically-bistable and multistable bridges for nonvolatile memory applications (2008)

Tsuchiya, Yoshishige, Matsuda, S., Nagami, T., Saito, S., Arai, T., Shimada, T., ...

Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films (2008)

Sawai, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Anomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity (2008)

Ogi, J., Manoharan, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Transient response analysis of programming/readout characteristics for NEMS memory (2008)

Nagami, T., Tsuchiya, Yoshishige, Matsuda, S., Saito, S., Arai, T., Shimada, T., ...

Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor? (2008)

Manoharan, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Observation of quantum level spectrum for silicon double single-electron transistors (2008)

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Electron transport through silicon multiple quantum dot array devices (2008)

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization (2008)

Hippo, D., Urakawa, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N., Oda, S.

Hybrid silicon nanotechnologies for advanced information processing (2008)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S.

Observation of quantum level spectrum for silicon double single-electron transistors (2008)

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6 (2008)

Akhtar, S., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Control of electrostatic coupling observed for silicon double quantum dot structures (2008)

Yamahata, G., Tsuchiya, Yoshishige, Oda, S., Durrani, Z.A.K., Mizuta, Hiroshi

Synthesis of assembled nanocrystalline Si dots film through the Langmuir-Blodgett technique (2008)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi, ...

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2008)

Ogi, J., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe (2008)

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Influence of nanocrystal size on the transport properties of Si nanocrystals (2008)

Zhou, X., Usami, K., Rafiq, M.A., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout (2008)

Kawata, Y., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization (2008)

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N, Oda, S

Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals (2008)

Cheong, H.J, Tanaka, A, Hippo, D, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

SOI-based radio-frequency single-electron transistors operating at temperatures above 4.2 K (2008)

Manoharan, M, Tsuchiya, Yoshishige, Oda, S, Mizuta, Hiroshi

Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure (2008)

Tsuchiya, Yoshishige, Furukawa, R, Kitamura, K, Nohira, H, Oda, S

Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing (2008)

Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin, Garcia Ramirez, Mario, Yoshimura, Hideo, ...

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices....

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2007)

Ogi, J., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Control of electrostatic coupling observed for Si double quantum dot structures (2007)

Yamahata, G., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout (2007)

Kawata, Y., Nishimoto, S., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Frontier Process Workshop 2007 (2007)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S.

Functional silicon nanoelectromechanical information processing devices (2007)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S.

Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions (2007)

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

DFT Simulation of Dynamic Charge States in Double Silicon Quantum Dots (2007)

Higashijima, S., Sawai, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi, Oda, S.

High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers (2007)

Tsuchiya, Yoshishige, Kurihara, T., Saito, D., Niikura, H., Mizuta, Hiroshi, Oda, S.

Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits (2007)

Kawata, Y., Manoharan, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Ab-initio simulation of phonon properties of ultra-thin silicon films (2007)

Sawai, S., Mizuta, Hiroshi, Higashijima, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige, ...

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanotlectromechanical Memory (2007)

Nagami, Tasuku, Mizuta, Hiroshi, Momo, Nobuyuki, Tsuchiya, Yoshishige, Saito, Shin-ichi, Arai, Tadashi, ...

Static and dynamic mechanical properties of the movable floating gate are investigated for a newly proposed high speed and non volatile nanoelectromechanical memory, which features a buckled floating...

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanotlectromechanical Memory (2007)

Nagami, Tasuku, Mizuta, Hiroshi, Momo, Nobuyuki, Tsuchiya, Yoshishige, Saito, Shin-ichi, Arai, Tadashi, ...

Static and dynamic mechanical properties of the movable floating gate are investigated for a newly proposed high speed and non volatile nanoelectromechanical memory, which features a buckled floating...

Light emission from size reduced nanocrystal silicon quantum dots (2007)

Tanaka, A., Hippo, D., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

Study of silicon nanodot formation in pulsed-gas VHF plasma process (2007)

Tsuchiya, Yoshishige, Ikezawa, K., Nakatsukasa, T., Inaba, N., Usami, K., Mizuta, Hiroshi, ...

Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method (2007)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi, ...

Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory (2007)

Nagami, T., Mizuta, Hiroshi, Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., ...

New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures (2007)

Hippo, D., Urakawa, K., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N., ...

Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor (2007)

Kawata, Y., Khalafalla, M., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk) (2007)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S.

Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode (2006)

Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, ...

High-density assembly of nanocrystalline silicon quantum dots (2005)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi, Oda, S.

High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots (2005)

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, ...

Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy (2004)

Kanjanachuchai, S, Tsuchiya, Yoshishige, Usami, K, Oda, S

An instrument for low- and variable-temperature millimeter-wave surface impedance measurements under magnetic fields (2003)

Hanaguri, T, Takaki, K, Tsuchiya, Yoshishige, Maeda, A

Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy (2003)

Kanjanachuchai, S, Tsuchiya, Yoshishige, Usami, K, Oda, S

Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry (2003)

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T, Oda, S

Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring (2003)

Tsuchiya, Yoshishige, Endoh, M, Oda, S

Effects of superconducting gap anisotropy on the flux flow resistivity in Y(Ni1-xPtx)2B2C (2002)

Takaki, K, Koizumi, A, Hanaguri, T, Nohara, M, Takagi, H, Kitazawa, K, ...

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry (2002)

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T, Oda, S

The electronic state of vortices in YBa2Cu3Oy investigated by complex surface impedance measurement (2001)

Tsuchiya, Yoshishige, Iwaya, Katsuya, Kinoshita, Kentarou, Hanaguri, Tetsuo, Kitano, Haruhisa, Maeda, Atsutaka, ...

The electromagnetic response to microwaves in the mixed state of YBa2Cu3Oy(YBCO) was measured in order to investigate the electronic state inside and outside the vortex core. The magnetic-field...

Reduction of the Superfluid Density in the Vortex-Liquid Phase of Bi2Sr2CaCu2Oy (1998)

Hanaguri, Tetsuo, Tsuboi, Takashi, Tsuchiya, Yoshishige, Sasaki, Ken-ichi, Maeda, Atsutaka

In-plane complex surface impedance of a Bi2Sr2CaCu2Oy single crystal was measured in the mixed state at 40.8 GHz.The surface reactance, which is proportional to the real part of the effective...

Yoshishige Tsuchiya

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