Scientific Commons: Z. Liliental-Weber

Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption,...

Atomic Structure of Pyramidal Defects in GaN:Mg; Influence of Annealing (2008)

Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., O'Keefe, M., Hautakangas, S., Saarinen, K., ...

Defects in p-GaN and their atomic structure (2008)

Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., Jasinski, J., And O'Keefe, M.

InN Nanorods and Epi-layers: Similarities and Differences (2008)

Liliental-Weber, Z., Kryliouk, O., Park, H.J., Mangum, J., Anderson, T., Schaff, W.

Examination of the local structure in composite and low dimensional semiconductor by X-ray Absorption Spectroscopy (2008)

Lawniczak-Jablonska, K., Demchenko, I.N., Piskorska, E., Wolska, A., Talik, E., Zakharov, D.N., ...

Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN (2008)

Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., O'Keefe, M.A.

Transmission Electron Microscopy Study of InN Nanorods (2008)

Liliental-Weber, Z., Li, X., Kryliouk, Olga, Park, H.J., Mangum, J., Anderson, T.

Defect Doping of InN (2008)

Jones, R.E., Yu, K.M., Walukiewicz, W., Li, S.X., A Ger III, J.W., ...

InN Nanorods Grown on Different Planes of Al2O3 (2007)

Liliental-Weber, Z., Park, H.J., Mangum, J., Anderson, T., Kryliouk, O.

Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates (2007)

Liliental-Weber, Z., Ni, X., Morkoc, H.

High Electron Mobility InN (2007)

Jones, R.E., Li, S.X., Haller, E.E., Yu, K.M., Ager III, J.W., ...

Orthodox etching of HVPE-grown GaN (2007)

Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., ...

Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+ NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the...

Defect reduction in (11-20) a-plane GaN by two step epitaxial lateral overgrowth (2006)

Ni, X., Ozgur, U., Fu, Y., Biyikii, N., Morkoc, H., Liliental-Weber, Z.

Defect reduction in (112_O) a-plane GaN by two-stage epitaxial lateral overgrowth (2006)

Ni, X., Ozgur, U., Fu, Y., Biyikli, N., Xie, J., Baski, A.A., ...

Orthodox etching of HVPE-grown GaN (2006)

Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Muller, S., ...

TEM studies of laterally overgrown GaN layers grown on non-polar substrates (2006)

Liliental-Weber, Z., Ni, X., Morkoc, H.

Photoluminescence of Energetic Particle-Irradiated InxGa1-xN Alloys (2005)

Li, S.X., Jones, R.E., Haller, E.E., Yu, K.M., Walukiewicz, W., Ager III, J.W., ...

Stable, free-standing Ge nanocrystals (2005)

Sharp, I.D., Xu, Q., Liao, C.Y., Yi, D.O., Beeman, J.W., Liliental-Weber, Z., ...

Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient MOCVD (2004)

Johnson, M.C., Liliental-Weber, Z., Zakharov, D.N., McCready, D.E., Jorgenson, R.J., Wu, J., ...

Tunable Intersublevel Transitions in Self-forming Semiconductor Quantum Dots (2004)

Leon, R., Fafard, S., Piva, P., Ruvimov, S., Liliental-Weber, Z.

Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).

On the crystalline structure, stoichiometry and band gap of InN thin films (2004)

Yu, K.M., Liliental-Weber, Z., Walukiewicz, W., Li, S.X., Jones, R.E., Shan, W., ...

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications (2004)

Cao, Y., Zhang, J., Li, X., Kosel, T.H., Fay, P., Hall, D.C., ...

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet...

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2 (2004)

Sharp, I.D., Yi, D.O., Xu, Q., Liao, C.Y., Beeman, J.W., Liliental-Weber, Z., ...

Effect of GaN template layer strain on the growth of InxGa1-xN/GaN MQW light emitting diodes (2004)

Johnson, M.C., Bourret-Courchesne, E.D., Wu, J., Liliental-Weber, Z., Zakharov, D.N., Jorgenson, R.J., ...

Atomic structure of defects in GaN:Mg grown with Ga polarity (2003)

Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., Jasinski, J., O'Keefe, M.A., Hautakangas, S., ...

Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting (2003)

Scarpulla, M.A., Daud, U., Yu, K.M., Monteiro, O., Liliental-Weber, Z., Zakharov, D., ...

Screw dislocations in GaN grown by different methods (2003)

Liliental-Weber, Z., Zakharov, D., Jasinski, J., O'Keefe, M.A., Morkoc, H.

Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing (PLM-RTA) of N+-implanted GaAs (2003)

Yu, K.M., Walukiewicz, W., Scarpulla, M.A., Dubon, O.D., Wu, J., Jasinski, J., ...

Crystal structure of kappa-In2Se3 (2002)

Jasinski, J., Swider, W., Washburn, J., Liliental-Weber, Z., Chaiken, A., Nauka, K., ...

Comparison of AlxGa1-xN films grown on sapphire by MBE under N-rich and Ga-rich conditions (2002)

Jasinski, J., Liliental-Weber, Z., He, L., Reshchikov, M.A., Morkoc, H.

Differences and similarities between structural properties of GaN grown by different growth methods (2002)

Liliental-Weber, Z., Jasinski, J., Washburn, J.

Structural and magnetic properties of MnAs nanoclusters formed by Mn ion implantation in GaAs (2002)

Serres, A., Benassayag, G., Respaud, M., Armand, C., Pesant, J.C., Mari, A., ...

Can laterally overgrown GaN layers be free of structural defects? (2002)

Cherns, D., Liliental-Weber, Z.

Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods (2002)

Liliental-Weber, Z., Jasinski, J., Washburn, J.

Microstructures of GaN and InxGa1-xN films grown by MOCVD on freestanding GaN templates (2002)

Jasinski, J., Liliental-Weber, Z., Huang, D., Reshchikov, M.A., Yun, F., Morkoc, H., ...

Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding (2002)

Jasinski, J., Liliental-Weber, Z., Estrada, S., Hu, E.

Transparent ZnO-based ohmic contact to p-GaN (2002)

Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., ...

Superior structural quality of newly developed GaN Pendeo-epitaxial layers (2002)

Liliental-Weber, Z., Jasinski, J., Cherns, D., Baines, M., Davis, R.

Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques (2002)

Visconti, P., Huang, D., Reshchikov, M.A., Yun, F., Cingolani, R., Smith, D.J., ...

Donor and acceptor concentrations in degenerate InN (2002)

Look, D.C., Lu, H., Schaff, W.J., Jasinski, J., Liliental-Weber, Z.

Influence of dopants on defect formation in GaN (2001)

Liliental-Weber, Z., Jasinski, J., Benamara, M., Grzegory, I., Porowski, S., Lampert, D.J.H., ...

Effects of structural defects on the activation of sulfur donors in GaN/x/As/1-x/ formed by N implantation (2001)

Jasinski, J., Yu, K.M., Walukiewicz, W., Liliental-Weber, Z., Washburn, J.

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy (2001)

Look, D.C., Jasinski, J., Benamara, M., Liliental-Weber, Z., Molnar, R.J.

Influence of Mg and In on defect formation in GaN; bulk and MOCVD grown samples (2000)

Liliental-Weber, Z., Benamara, M., Jasinski, J., Swider, W., Washburn, J., Grzegory, I., ...

Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by...

Influence of low temperature-grown GaAs on lateral thermal oxidation of Al0.98Ga0.02As (2000)

Ferrer, J.C., Liliental-Weber, Z., Reese, H., Chiu, Y.J., Hu, E.

The lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to...

Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si (1994)

Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.

Coarsening and phase transition of FeSi$_2$ precipitates in Si (1994)

Lin, X.W., Washburn, J., Liliental-Weber, Z., Bernas, H.

Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si (1994)

Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.

Coarsening and phase transition of FeSi$_2$ precipitates in Si (1994)

Lin, X.W., Washburn, J., Liliental-Weber, Z., Bernas, H.

Low-temperature ion-induced epitaxial growth of alpha-FeSi$_2$ and cubic FeSi$_2$ in Si (1993)

Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Washburn, J., Liliental-Weber, Z.

Ion-beam-induced simultaneous epitaxial growth of alpha- and cubic FeSi$_2$ in Si (100) at 320 degres C (1993)

Desimoni, J., Behar, M., Bernas, H., Lin, X.W., Liliental-Weber, Z., Washburn, J.

Ion beam synthesis of cubic FeSi$_2$ (1993)

Desimoni, J., Bernas, H., Behar, M., Lin, X.W., Washburn, J., Liliental-Weber, Z.

Evolution of cubic FeSi$_2$ in Si upon thermal annealing (1993)

Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.

Epitaxial phase formation of FeSi$_2$ in an Fe-implanted Si by ion irradiation and rapid thermal annealing (1993)

Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Swider, W., Liliental-Weber, Z., ...

Low-temperature ion-induced epitaxial growth of alpha-FeSi$_2$ and cubic FeSi$_2$ in Si (1993)

Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Washburn, J., Liliental-Weber, Z.

Ion-beam-induced simultaneous epitaxial growth of alpha- and cubic FeSi$_2$ in Si (100) at 320 degres C (1993)

Desimoni, J., Behar, M., Bernas, H., Lin, X.W., Liliental-Weber, Z., Washburn, J.

Ion beam synthesis of cubic FeSi$_2$ (1993)

Desimoni, J., Bernas, H., Behar, M., Lin, X.W., Washburn, J., Liliental-Weber, Z.

Evolution of cubic FeSi$_2$ in Si upon thermal annealing (1993)

Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.

Epitaxial phase formation of FeSi$_2$ in an Fe-implanted Si by ion irradiation and rapid thermal annealing (1993)

Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Swider, W., Liliental-Weber, Z., ...

On the dynamic nature of microscopy specimens at lattice resolution (1989)

Washburn, J., Liliental-Weber, Z.

Examples are shown that illustrate rapid changes that can take place while a thin foil specimen is under observation in a high-voltage microscope. These unusually dramatic examples emphasize the fact...

On the dynamic nature of microscopy specimens at lattice resolution (1989)

Washburn, J., Liliental-Weber, Z.

Examples are shown that illustrate rapid changes that can take place while a thin foil specimen is under observation in a high-voltage microscope. These unusually dramatic examples emphasize the fact...

On the dynamic nature of microscopy specimens at lattice resolution (1989)

Washburn, J., Liliental-Weber, Z.

Examples are shown that illustrate rapid changes that can take place while a thin foil specimen is under observation in a high-voltage microscope. These unusually dramatic examples emphasize the fact...

Z. Liliental-Weber

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