Z. R. Wasilewski

Publication List Details

Period

1998 - 2009

Number

32

Co-Authors

Stable mode-locked pulses from mid-infrared semiconductor lasers (2009)

Wang, Christine Y., Kuznetsova, L., Gkortsas, V. M., Diehl, L., Kaertner, F. X., Belkin, M. A., ...

We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical...

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors (2007)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Gupta, J. A., Friedland, K. J., ...

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should...

Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas (2006)

Studenikin, S. A., Sachrajda, A. S., Gupta, J. A., Wasilewski, Z. R., Fedorych, O. M., Byszewski, M., ...

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these...

Emission from a highly excited single InAs-GaAs quantum dot in magnetic fields: An excitonic Fock-Darwin diagram (2006)

Babinski, A., Potemski, M., Raymond, S., Lapointe, J., Wasilewski, Z. R.

Magnetospectroscopy of a highly excited single InAs-GaAs quantum dot is performed. The multiexcitonic emission related to the s, p, and d shells of a zero-dimensional system is identified. Orbital...

Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well (2006)

Desrat, W., Maude, D. K., Wasilewski, Z. R., Airey, R., Hill, G.

Weak antilocalization has been observed in the magnetoresistance of a symmetric GaAs/AlGaAs quantum well. The two-dimensional carrier density can be tuned both by the application of hydrostatic...

The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime (2006)

Studenikin, S. A., Byszewski, M., Maude, D. K., Potemski, M., Sachrajda, A., Wasilewski, Z. R., ...

Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from similar to 20 GHz up to similar to 4 THz, and from the quasi-classical...

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy (2006)

Sun, H.D., Calvez, S.*, Dawson, M.D.*, Gupta, J.A., Sproule, G.I., Wu, X., ...

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy (2006)

Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., ...

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

Spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy (2006)

Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., ...

Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition (2005)

Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Friedland, K. J., Hey, R., ...

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK...

Role of Sb in the growth and optical properties of 1.55um GaInN(Sb)As/GaNAs quantum-well structures grown by molecular beam epitaxy (2005)

Sun, H.D. *, Calvez, S. *, Dawson, M.D. *, Gupta, J.A., Sproule, G.I., Wasilewski, Z.R, ...

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...

Role of Sb in the growth and optical properties of 1.55um GaInN(Sb)As/GaNAs quantum-well structures grown by molecular beam epitaxy (2005)

Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wasilewski, Z.R., ...

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...

Role of Sb in the growth and optical properties of 1.55um GaInN(Sb)As/GaNAs quantum-well structures grown by molecular beam epitaxy (2005)

Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wasilewski, Z.R., ...

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...

The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime (2005)

Studenikin, S. A., Byszewski, M., Maude, D. K., Potemski, M., Sachrajda, A., Wasilewski, Z. R., ...

Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the...

Role of Sb on the growth and optical properties of 1.55 mm GaInN(Sb)As/GaNAs quantum well structures by molecular beam expitaxy. (2005)

Sun, H. D., Calvez, Stephane., Dawson, M. D., Gupta, J. A., Sproule, G. I., Wu, X., ...

High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...

Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two-dimensional electron gas (2004)

Studenikin, S. A., Potemski, M., Coleridge, P. T., Sachrajda, A. S., Wasilewski, Z. R.

We confirm the existence of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zudov et al. [Phys. Rev. B 64 (2001)...

Long time relaxation phenomena of a two-dimensional electron system within integer quantum Hall plateau regimes after magnetic field sweeps (2004)

Huels, J., Weis, J., Smet, J., Von Klitzing, K., Wasilewski, Z. R.

For investigating a two-dimensional electron system (2DES) in high magnetic fields and at temperatures below 0.1 K a single electron transistor (SET) is directly fabricated on top of a GaAs/AlGaAs...

Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two dimensional electron gas (2003)

Studenikin, S. A., Potemski, M., Coleridge, P. T., Sachrajda, A., Wasilewski, Z. R.

We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our...

Resistively detected nuclear magnetic resonance in the quantum Hall regime: Possible evidence for a Skyrme crystal (2002)

Desrat, W., Maude, D. K., Potemski, M., Portal, J. C., Wasilewski, Z. R., Hill, G.

Resistively detected nuclear magnetic resonance measurements have been performed on a high mobility heterostructure in the quantum Hall regime. At millikelvin temperatures the nuclear resonances are...

Resistively detected NMR in the quantum Hall regime (2002)

Desrat, W., Maude, D. K., Potemski, M., Portal, J. C., Wasilewski, Z. R., Hill, G.

We present resistively detected nuclear magnetic resonance performed on a high mobility two-dimensional electron gas. Nuclear resonances have been observed for all three isotopes Ga-69, Ga-71 and...

Negative capacitance effect in semiconductor devices (1998)

Ershov, M., Liu, H. C., Li, L., Buchanan, M., Wasilewski, Z. R., Jonscher, A. K.

Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical...